Abstract:The enabling power of van der Waals imprinting is invoked to stabilize metastable group IV–VI compounds, as exemplified by the Black‐phosphorene‐like puckered GeTe on the (001) surface of the isostructural ground‐state phase of SnSe. Remarkably, the as‐grown IV–VI heterostructures harbor significantly enhanced spontaneous polarization and multistate ferro‐/ferri‐electricity compelling for next‐generation memory devices, as well as polarization‐tunable persistent spin helix state and Berry curvature dipole promising for achieving coherent spin transport and nonlinear Hall effect. Layered group IV–VI compounds (i.e., SnSe, SnS, GeSe, and GeS) in the puckered structure resembling black‐phosphorene (BlackP) have attracted increasing interest because of their intriguing ferroic orders and outstanding thermoelectric properties. By invoking the guiding principles of isovalency and isomorphism for promoting van der Waals epitaxy, and based on comprehensive first‐principles calculations, here it is shown that the typically metastable BlackP‐like GeTe can be readily stabilized on the (001) surface of isostructural SnSe. Importantly, the ferroelectricity of such a BlackP‐like GeTe monolayer can be substantially enhanced compared to the freestanding state, due to the substrate enlarged in‐plane polar displacements. The GeTe/SnSe heterobilayer exhibits multiple ferroelectric/ferrielectric polarization states, which can be exploited for high‐density memory devices. These mutually switchable polarization states are also shown to be internally locked with the spin polarization of the valence/conduction bands with pronounced Rashba spin‐orbit splitting and Berry curvature dipole. These findings highlight the intuitive yet enabling power of van der Waals imprinting in growing novel 2D materials for enriched functionalities.

Strong interlayer coupling and unusual antisite defects mediated p-type conductivity in GeP x ( x = 1, 2)

Weak Interlayer Interaction in 2D Anisotropic GeSe2

Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies.

GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement

First-Principles Study of Intrinsic Point Defects of Monolayer GeS

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Defect Physics of Ternary Semiconductor Zn Ge P 2 with a High Density of Anion-Cation Antisites: A First-Principles Study

Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment

Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study

A first-principle study on the band structure of GePb alloys

Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers

Prediction of 2D IV-VI Semiconductors: Auxetic Materials with Direct Bandgap and Strong Optical Absorption

Prediction of 2D IV–VI semiconductors: auxetic materials with direct-gap and strong optical absorption

Flexoelectric effect induced p–n homojunction in monolayer GeSe

Stabilizing Phosphorene‐Like Group IV–VI Compounds via van der Waals Imprinting for Multistate Ferroelectricity and Tunable Spin Transport

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

A type-II MnPSe 3 /GeC heterostructure with tunable spin and valley splitting

Pressure-induced evolution of structure and electronic property of GeP

Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate