Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

Electrochemical Pore Etching in N- and P-Type Ge

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Anisotropic Optical Properties of Layered Germanium Sulfide

Comprehensive investigation of Thermal Induced Reorganization of Porous-Germanium structures

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition.

Optical Properties of Orthorhombic Germanium Sulfide: Unveiling the Anisotropic Nature of Wannier Excitons.

Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs

Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton

Resolving the Anisotropic Dynamical Evolution of Wide Bandgap GeSe2 Under Polarized Photoexcitation