Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Prediction of 2D IV-VI Semiconductors: Auxetic Materials with Direct Bandgap and Strong Optical Absorption

Prediction of 2D IV–VI semiconductors: auxetic materials with direct-gap and strong optical absorption

Prediction of new Group IV-V-VI monolayer semiconductors based on first principle calculation

Theoretical prediction of novel two-dimensional auxetic material SiGeS and study of its electronic and optical properties

Group III (In/Ga)-V (P/As)-VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties

Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction

Electronic Properties of Two-Dimensional IV–V Group Materials from Density Functional Theory

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Prediction of a new two-dimensional valleytronic semiconductor MoGe2P4 with large valley spin splitting

High out-of-plane negative Poisson's ratios and strong light harvesting in two-dimensional SiS2 and its derivatives

Prediction of BiS 2 -type pnictogen dichalcogenide monolayers for optoelectronics

Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios

Auxetic two-dimensional transition metal selenides and halides

Ultrahigh Carrier Mobility in Two-Dimensional IV–VI Semiconductors for Photocatalytic Water Splitting

Monolayer Ii-Vi Semiconductors: A First-Principles Prediction

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

First-Principles Prediction of 2D Semiconductors MAN3 (M = V, Nb, Ta; A = Si, Ge) from the MA2N4 Family: Implication for Optoelectronics Applications

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

Band gaps of long-period polytypes of IV, IV-IV, and III-V semiconductors estimated with an Ising-type additivity model

New Layered II–III–VI Semiconductors: Promising Materials for High Performance Solar Cells

Two-Dimensional Multiferroics: Ferroelasticity, Ferroelectricity, Domain Wall, and Potential Mechano-Opto-Electronic Applications