[Construction of metallic covering for unitary metallic ceramic crowns without going through a wax procedure].

A. Roditti,J. Guyonnet,C. Vigneau,C. Arnaud,C. Marty

1978-09-01

Abstract:

What problem does this paper attempt to address?

Stability, electronic, phonon, thermal and optical properties of SrX (X=S, Se) nanosheet based on AIMD and DFT computations

Nzar Abdullah,Botan Jawdat Abdullah,Rangeen Othman Salih,Hemn Gharib Hussein,Vidar Gudmundsson

DOI: https://doi.org/10.1039/d4cp01821d

IF: 3.3

2024-06-14

Physical Chemistry Chemical Physics

Abstract:The electronic structural, the stability, the thermal, and the optical properties of hexagonal SrS and SrSe monolayers are studied using first-principles calculations. The calculated equilibrium properties of solids and their surfaces are generally improved by PBEsol and predict a wider band gap of the monolayers closer to results obtained with HSE06. The dynamic and thermal stability of both structures are confirmed with phonon dispersion relations and an ab-initio molecular dynamics (AIMD) method. The phonon modes of an SrSe monolayer are lower in energy than in SrS and the gap between the acoustic and the optical modes is larger leading to weaker thermal properties such as the heat capacity. Furthermore, both SrS and SrSe monolayers demonstrate an active optical response in the far visible light region with modest anisotropic optical characteristics in different polarization directions. It is found that SrS has a slightly higher static dielectric constant than SrSe and the primary optical conductivity follows the same trend. Another important finding is that an SrS monolayer exhibits plasmonic excitations but SrSe does not.

chemistry, physical,physics, atomic, molecular & chemical
As2S3, As2Se3 and As2Te3 nanosheets: Superstretchable semiconductors with anisotropic carrier mobilities and optical properties

Bohayra Mortazavi,Fazel Shojaei,Maryam Azizi,Timon Rabczuk,Xiaoying Zhuang

DOI: https://doi.org/10.1039/C9TC05904K

2020-01-02

Abstract:In this work, density functional theory calculations were carried out to explore the mechanical response, dynamical/thermal stability, electronic/optical properties and photocatalytic features of monoclinic As2X3 (X=S, Se and Te) nanosheets. Acquired phonon dispersions and ab-initio molecular dynamics results confirm the stability of studied nanomembranes. Observation of relatively weak interlayer interactions suggests that the exfoliation techniques can be potentially employed to fabricate nanomembranes from their bulk counterparts. The studied nanosheets were found to show highly anisotropic mechanical properties. Notably, new As2Te3 2D lattice predicted by this study is found to exhibit unique superstretchability, which outperforms other 2D materials. In addition, our results on the basis of HSE06 functional reveal the indirect semiconducting electronic nature for the monolayer to few-layer and bulk structures of As2X3, in which a moderate decreasing trend in the band-gap by increasing the thickness can be established. The studied nanomaterials were found to show remarkably high and anisotropic carrier mobilities. Moreover, optical results show that these nanosheets can absorb the visible light. In particular, the valence and conduction band edge positions, high carrier mobilities and optical responses of As2Se3 nanosheets were found to be highly desirable for the solar water splitting. The comprehensive vision provided by this study not only confirm the stability and highly attractive electronic and optical characteristics of As2S3, As2Se3 and As2Te3 nanosheets, but also offer new possibilities to design superstretchable nanodevices.

Computational Physics,Materials Science
Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Shuahua Cao,Huayun Geng,Cui-E. Hu,Tian Zhang,Xiangshan Chen

DOI: https://doi.org/10.1039/d2cp03708d

2022-10-31

Abstract:Bismuth telluride (Bi2Te3) and its derivatives are often focused on as thermoelectric materials around room temperature. In this work, we theoretically predicted two new types of Bi2Te3-based two-dimensional materials Bi2SSe2 and Bi2S2Se using density functional theory (DFT) combined with Boltzmann transport theory. The thermal, dynamic, and mechanical stabilities of Bi2SSe2 and Bi2S2Se monolayers are confirmed using ab initio molecular dynamics (AIMD) simulations, phonon dispersion, and elastic constant calculations. The phonon transport properties, including lattice thermal conductivity, group velocity, Grüneisen parameter, converged scattering rate, and phonon lifetimes contributed by different branches, are systematically investigated. The electronic and thermoelectric properties, including carrier mobility (μ), Seebeck coefficient (S), electrical conductivity (σ), power factors, and figure of merit (zT) along the zigzag and armchair directions as a function of carrier concentration at different temperatures, are also investigated. It is found that the Bi2SSe2 and Bi2S2Se monolayers have moderate indirect band gaps (0.92 eV and 1.08 eV at the PBE level, respectively) and low lattice thermal conductivities (4.35 and 5.37 W m-1 K-1 at 300 K, respectively). The largest zT values of Bi2SSe2 and Bi2S2Se monolayers are 0.50 and 0.28 at 300 K and 1.39 and 0.93 at 700 K for p-doping types, respectively. The Bi2SSe2 and Bi2S2Se monolayers are predicted to show high optical absorption peaks at 8 × 105 cm-1 in the visible and near-UV light region, respectively. Our results indicate that both Bi2SSe2 and Bi2S2Se could be promising candidates in energy conversion, solar cells, and optoelectronic devices.

Medicine,Materials Science,Physics
Prediction of BiS 2 -type pnictogen dichalcogenide monolayers for optoelectronics

José D. Mella,Muralidhar Nalabothula,Francisco Muñoz,Karin M. Rabe,Ludger Wirtz,Sobhit Singh,Aldo H. Romero

DOI: https://doi.org/10.1038/s41699-023-00439-4

IF: 10.516

2024-01-14

npj 2D Materials and Applications

Abstract:In this work, we introduce a 2D materials family with chemical formula MX 2 (M={As, Sb, Bi} and X={S, Se, Te}) having a rectangular 2D lattice. This materials family has been predicted by systematic ab-initio structure search calculations in two dimensions. Using density-functional theory and many-body perturbation theory, we study the structural, vibrational, electronic, optical, and excitonic properties of the predicted MX 2 family. Our calculations reveal that the predicted SbX 2 and BiX 2 monolayers are stable while the As X 2 layers exhibit an in-plane ferroelectric instability. All materials display strong excitonic effects and good optical absorption within the infrared-to-visible range. Hence, these monolayers can harvest solar energy and serve in optoelectronics applications. Furthermore, our results indicate that exfoliation of the predicted MX 2 monolayers from their bulk counterparts is experimentally viable.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
First-Principles Prediction of Graphene-Like XBi (X=Si, Ge, Sn) Nanosheets

A. Bafekry,M. Yagmurcukardes,B. Akgenc,M. Ghergherehchi,B. Mortazavi

DOI: https://doi.org/10.48550/arXiv.2009.12561

2020-09-26

Abstract:Research progress on single-layer group III monochalcogenides have been increasing rapidly owing to their interesting physics. Herein, we predict the dynamically stable single-layer forms of XBi (X=Ge, Si, or Sn) by using density functional theory calculations. Phonon band dispersion calculations and ab-initio molecular dynamics simulations reveal the dynamical and thermal stability of predicted nanosheets. Raman spectra calculations indicate the existence of 5 Raman active phonon modes 3 of which are prominent and can be observed in a possible Raman measurement. Electronic band structures of the XBi single-layers investigated with and without spin-orbit coupling effects (SOC). Our results show that XBi single-layers show semiconducting property with the narrow band gap values without SOC. However only the single-layer SiBi is an indirect band gap semiconductor while GeBi and SnBi exhibit metallic behaviors by adding spin-orbit coupling effects. In addition, the calculated linear-elastic parameters indicate the soft nature of predicted monolayers. Moreover, our predictions for the thermoelectric properties of single-layer XBi reveal that SiBi is a good thermoelectric material with increasing temperature. Overall, it is proposed that single-layer XBi structures can be alternative, stable 2D single-layers with their varying electronic and thermoelectric properties.

Materials Science,Computational Physics
Prediction of new Group IV-V-VI monolayer semiconductors based on first principle calculation

Qingxing Xie,Junhui Yuan,Niannian Yu,Lisheng Wang,Jiafu Wang

DOI: https://doi.org/10.48550/arXiv.1704.03756

2017-04-12

Abstract:Two-dimension (2D) semiconductor materials have attracted much attention and research interest for their novel properties suitable for electronic and optoelectronic applications. In this paper, we have proposed an idea in new 2D materials design by using adjacent group elements to substitute half of the atoms in the primitive configurations to form isoelectronic compounds. We have successfully taken this idea on group V monolayers and have obtained many unexplored Group IV-V-VI monolayer compounds: P2SiS, As2SiS, As2GeSe, Sb2GeSe, Sb2SnTe, and Bi2SnTe. Relative formation energy calculations, phonon spectrum calculations, as well as finite-temperature molecular dynamics simulations confirm their stability and DFT calculations indicate that they are all semiconductors. This idea broadens the scope of group V semiconductors and we believe it can be extended to other type of 2D materials to obtain new semiconductors with better properties for optoelectronic and electronic applications.

Materials Science
Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Yao Wang,Jinsen Zhang,Xuanlin Zhang,Chenqiang Hua,Y. H. Lu,Xinyong Tao

DOI: https://doi.org/10.1039/d4cp03782k

IF: 3.3

2024-12-05

Physical Chemistry Chemical Physics

Abstract:Recently, the atomic-thickness van der Waals (vdW) layered bismuth selenite (Bi 2 SeO 5 ) has been successfully synthesized, not only expanding the family of two-dimensional (2D) materials, but also playing a pivotal role in the advancement of 2D electronics as a high- κ dielectric. In this work, we systematically study the basic properties of 2D Bi 2 SeO 5 through first-principles calculations, focusing on the spin-orbit coupling (SOC) effect and layer-dependent behaviors. The results show that SOC can adjust the bandgap of bulk/2D Bi 2 SeO 5 from direct to indirect, with the bandgap decreasing as thickness increases due to quantum confinement. Importantly, we observe that SOC has a negligible effect on the valence bands edge but significantly impacts the conduction bands edge, due to the specific distribution of the Bi- p orbital. We also explore the vdW magnetic tunneling junction based on 2D Bi 2 SeO 5 , which can exhibit significant tunneling magnetoresistance between the parallel and antiparallel magnetic alignments of the electrodes, e.g. 900% for 1L and 1800% for 2L. As for the optical properties, strong layer dependence is also verified, and the large absorption coefficient is determined to be ~10 6 cm -1 . At last, we also explore the piezoelectric properties. Overall, layered Bi 2 SeO 5 is a potential candidate material for electronic devices and optoelectronic applications, as well as the nano-spintronics.

chemistry, physical,physics, atomic, molecular & chemical
2D V–VI Binary Nanosheets with Square Lattice: A Theoretical Investigation

Xin Qiao,Xiaodong Lv,Yinan Dong,Yanping Yang,Fengyu Li

DOI: https://doi.org/10.1002/pssb.202100178

2021-07-09

physica status solidi (b)

Abstract:It is of paramount importance to explore novel two-dimensional (2D) materials with unique structural and physical properties that are promising to be applied in specific field. In this work, we studied 11 monolayers with novel square lattice, including S-SeN2, S-TeN2, S-SP2, S-SeP2, S-TeP2, S-SAs2, S-SeAs2, S-TeAs2, S-SSb2, S-SeSb2 and S-TeSb2, via first-principles calculations. And through our stability screening, only the S-SeN2 monolayer, where each Se atoms is tetra-coordinated with four N atoms, and each N atoms bridges two atoms, thus forming a tri-sublayer structure with square lattice, was verified as a stable 2D crystal, since it has high cohesive energy, all positive modes in phonon spectrum, and structural integrity through the molecular dynamics simulation up to 500 K. It is an indirect-bandgap semiconductor with high hole mobility, and the direct-bandgap feature can be easily obtained under external uniaxial compressions or biaxial tensions, which can be applied in electronics, photoelectronics, etc.This article is protected by copyright. All rights reserved.

physics, condensed matter
First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

Zhi-Yuan Qiu,Ya-Le Tao,Qi-Jun Liu,Zheng-Tang Liu

DOI: https://doi.org/10.1007/s00894-024-06112-x

2024-08-29

Abstract:Context and results: The structure, electronic and optical properties of single-layer transition metallic chalcogenides ZrX3 (X = S, Se, Te) have been studied by density functional theory. The electron energy dispersion curve shows that ZrX3 has semiconductor properties, in which the conduction band is mainly contributed by the correlated states of the Zr-d orbital, and the valence band is mainly contributed by the correlated states of the X-p orbital. It is found that b-axis and biaxial strain have great influence on the bandgap and the shift of density of states is also large. At the same time, the peak value of density of states increases greatly when biaxial strain is applied. It is of guiding significance for selecting suitable substrates to prepare two-dimensional ZrX3 materials to study their electronic properties. The calculation of optical constants confirms that ZrX3 has strong optical anisotropy. In the visible range, the light absorption efficiency of ZrX3 in the direction of electric field polarization [100] is higher than that in the direction of [010]. The reflectance spectral results show that ZrS3 and ZrSe3 in the [100] directions have the highest reflectance, and ZrTe3 in the [010] direction has the highest reflectance, even in the long electromagnetic radiation range (up to 10 eV), which is of great significance for the construction of visible optical devices. Computational method: All computations have been carried out based on density functional theory (DFT) as implemented in the CASTEP code. The pseudo-potential is adopted by the norm conserving, and the exchange correlation functional is adopted by the Perdew-Burke-Ernzerhof in local generalized gradient approximation (GGA).
Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

Maximilian Amsler,Logan Ward,Vinay I. Hegde,Maarten G. Goesten,Xia Yi,Chris Wolverton

DOI: https://doi.org/10.1103/PhysRevMaterials.3.035404

2018-12-07

Abstract:We report the computational investigation of a series of ternary X$_4$Y$_2$Z and X$_5$Y$_2$Z$_2$ compounds with X={Mg, Ca, Sr, Ba}, Y={P, As, Sb, Bi}, and Z={S, Se, Te}. The compositions for these materials were predicted through a search guided by machine learning, while the structures were resolved using the minima hopping crystal structure prediction method. Based on $\textit{ab initio}$ calculations, we predict that many of these compounds are thermodynamically stable. In particular, 21 of the X$_4$Y$_2$Z compounds crystallize in a tetragonal structure with $\textit{I-42d}$ symmetry, and exhibit band gaps in the range of 0.3 and 1.8 eV, well suited for various energy applications. We show that several candidate compounds (in particular X$_4$Y$_2$Te and X$_4$Sb$_2$Se) exhibit good photo absorption in the visible range, while others (e.g., Ba$_4$Sb$_2$Se) show excellent thermoelectric performance due to a high power factor and extremely low lattice thermal conductivities.

Materials Science
First-principles study on stability, electronic and optical properties of 2D SbXY (X=Se/Te, Y=I/Br)Janus layers

Anjana E Sudheer,Amrendra Kumar,Tejaswini G,Muthu Vallinayagam,Matthias Posselt,Matthias Zschornak,Chinnathambi Kamal,D. Murali

DOI: https://doi.org/10.1039/d4cp04077e

IF: 3.3

2024-11-10

Physical Chemistry Chemical Physics

Abstract:Motivated by the exceptional optoelectronic properties of 2D Janus layers (JLs), we explore the properties of group Va antimony-based JLs SbXY (X=Se/Te, Y=I/Br). From the Bader charges, the elec-tric dipole moment in the out-of-plane direction of all the JLs is studied and the largest dipole momentis found to be in the SbSeI JL. Our results on the formation energy, phonon spectra, elastic constants, and ab initio molecular dynamic (AIMD) simulation, predict the energetic, vibrational, mechanical,and thermal stability of JLs. After confirming the stability, the three-dimensional phase diagram isinvestigated to propose the experimental conditions required to fabricate the predicted JLs. Then,the electronic band structure is calculated using different levels of theory namely generalized gradi- ent approximation (GGA), GGA+ spin-orbit coupling (GGA+SOC), hybrid Heyd-Scuseria-Ernzerhof(HSE), and many-body perturbation theory-based Green's function method (GW). According to the HSE results, JLs show band gaps between 1.653 and 1.852 eV. The GGA+SOC calculations reveal Rashba spin splitting in these JLs. The calculated carrier mobility using deformation potential the- ory shows that the electrons have exceptionally high mobility compared to holes, which assists the spatial separation of both charge carriers. The optical spectra are determined using GGA, HSE, andGW methods. With respect to GGA results, HSE and GW optical spectra show a blue shift. Moreaccurate calculations by the GW-Bethe Salpeter equation (BSE) yield optical absorption spectra which are dominated by strong excitonic effects with excitonic binding energy (BEex) in the rangeof 550-800 meV. Compared to GW-BSE, the Mott-Wannier (MW) model predicts lower BEex. The strong e-h coupling is observed for dispersions along K − M in the Brillouin zone from the fat band analysis. From our study, SbSeI JL is a potential candidate for photocatalytic and photovoltaic applications due to its largest dipole moment and low excitonic binding energy.

chemistry, physical,physics, atomic, molecular & chemical
First-principles study of the electron and phonon transport properties in monolayer boron monosulfide

Hong-Yue Song,Ying Guo,Dandan Liu,Meng Li

DOI: https://doi.org/10.1088/1361-6463/ad8c54

2024-10-31

Journal of Physics D Applied Physics

Abstract:Motivated by the excellent electronic properties of theoretical proposed monolayer boron monosulfides (BS) binary materials, which belongs to a light-element member of group IIIA chalcogenides family, we have investigated the electron and phonon transport properties of three monolayer phases of BS ( , and ) using first-principles and Boltzmann transport theory method. The calculated electronic structures show that - and -BS are semiconductors with indirect bandgaps of 4.01 eV and 3.87 eV, respectively, whereas the -BS is a semiconductor with a direct bandgap of 2.97 eV. Additionally, due to their light carrier effective masses, superior high carrier mobilities are observed, thus bringing high Seebeck coefficients. We also find that due to the absence of imaginary phonon frequencies, three monolayer phases of BS show dynamical stability. And the phonon group velocity and relaxation time are also calculated to analyse the phonon thermal conductivity. We find that strong phonon scattering makes -BS monolayer possess extremely low phonon thermal conductivity (1.2 and 2.7 Wm K along the and directions at 300 K, respectively), whereas - and -BS monolayers show a relatively high phonon thermal conductivity. Therefore, a highest predicted value of 1.7 ( -type) at 700 K is obtained for monolayer -BS along the direction. However, - and -BS monolayers have extremely low values. Our results reveal that -BS monolayer has a wider promising applications in high performance thermoelectric material than - and -BS monolayers.

physics, applied
A DFT Study of Bandgap Engineering and Tuning of Structural, Electronic, Optical, Mechanical and Transport Properties of Novel [Ba4Sb4Se11]: Sr3+ Selenoantimonate for Optoelectronic and Energy Exploitations

Kakul Husain,Muhammad Irfan,Sana Ullah Asif,Mudassir Hussain Tahir

DOI: https://doi.org/10.1007/s10904-024-03039-x

IF: 3.518

2024-03-26

Journal of Inorganic and Organometallic Polymers and Materials

Abstract:The comprehensive first-principles analysis of Ba 4 Sb 4 Se 11 and [Ba 4 Sb 4 Se 11 ]:Sr 3+ Selenoantimonate Using DFT demonstrates its semiconductor nature, anisotropic ductile properties, and prospective optoelectronic applications, particularly in solar cells and LED technologies, supported by comprehensive structural, electronic, optical, and mechanical studies. All the relevant parameters were determined in this investigation using the framework of DFT by modified Becke Johnson approximations. These parameters include the extinction coefficient, absorption coefficient, energy loss function, reflectivity, refractive index, optical conductivity, and birefringes. The elastic parameters have been calculated based on anisotropic sound velocities and mechanical stability. These parameters include bulk modulus, shear modulus, Young's modulus, and Poisson's ratio. Based on an analysis of the energy band dispersions, it can be concluded that the examined compounds possess semiconductor properties. The data on elastic parameters suggest that the material exhibits anisotropic and ductile characteristics, which could have potential applications in optoelectronics. The Ba 4 Sb 4 Se 11 (2.2 eV) and [Ba 4 Sb 4 Se 11 ]: Sr 3+ (1.68 eV) have a direct band gap, which falls within the visible spectrum showing semiconducting nature. The analysis of the thermoelectric properties of investigated compounds has been conducted using the Boltztrap code, marking a significant in scientific research. The study revealed that these compounds have the potential to be utilized in highly challenging transport conditions. Additional investigations and cooperation are essential for understanding the fundamental processes and enhancing the material for effective utilization in various technological applications for solar cells and LED in the energy and optoelectronic industry.

polymer science
Enhancing phonon thermal transport in 2H-CrX2 (X = S and Se) monolayers through robust bonding interactions

Shuwei Tang,Da Wan,Shulin Bai,Shengkai Fu,Xinyu Wang,Xiaodong Li,Jingyi Zhang

DOI: https://doi.org/10.1039/d3cp03420h

2023-01-01

Abstract:Inspired by the groundbreaking discovery of the 2H-MoS2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born-Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m(-1) K-1 are discovered for 2H-CrS2 and 2H-CrSe2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Gruneisen parameter shows that the high lattice thermal conductivities of 2H-CrX2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS2 and 2H-CrSe2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.
Electronic, optical, and thermoelectric behaviour of KCuX (X = S, Se, Te) monolayers

Neelam Gupta,Shubham Kumar,Shivani Rani,Puja Kumari,Subhasmita Kar,Rajeev Ahuja,Soumya Jyoti Ray

DOI: https://doi.org/10.1088/1361-648x/ad84a8

2024-10-09

Journal of Physics Condensed Matter

Abstract:In the past few decades, two-dimensional (2-D) materials gained huge deliberation due to their outstanding electronic and heat transport properties. These materials have effective applications in many areas such as photodetectors, battery electrodes, thermoelectrics, etc. In this work, we have calculated structural, electronic, optical, and thermoelectric properties of KCuX (X = S, Se, Te) monolayers (MLs) with the help of first-principles-based calculations and semi-classical Boltz- mann transport equation (BTE). The phonon dispersion calculations demonstrate the dynamical stability of the KCuX (X = S, Se, Te) MLs. Our results show that the monolayers of KCuX (X = S, Se, Te) are semiconductors with band gaps of 0.193 eV, 0.26 eV, and 1.001 eV respectively, and therefore they are suitable for photovoltaic applications. The optical analysis illustrates that the maximum absorption peaks of the KCuX (X = S, Se, Te) MLs are located in visible and ultraviolet (UV) regions, which may serve as a promising candidate for designing advanced optoelectronic devices. Furthermore, thermoelectric properties of the KCuS and KCuSe MLs, including See- beck coefficient, electrical conductivity, electronic thermal conductivity, power factor, and figure of merit, are calculated at different temperatures 300 K, 600 K, and 800 K. Additionally, we also focus on the analysis of Gru ̈neisen parameter and various scattering rates to further explain their ultra-low thermal conductivity. Our results show that KCuS and KCuSe possess ultra-low lattice thermal conductivity value of 0.15 Wm−1K−1 and 0.06 Wm−1K−1 respectively, which is lower than those of recently reported KAgSe (0.26 Wm−1K−1 at 300 K) and TlCuSe (0.44 Wm−1K−1 at 300 K), indicating towards the large value of ZT. These materials are found to possess desirable thermoelectric and optical properties, making them suitable candidates for efficient thermoelectric and optoelectronic device applications.

physics, condensed matter
Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions

Shuwei Tang,Da Wan,Shulin Bai,Shengkai Fu,Xinyu Wang,Xiaodong Li,Jingyi Zhang

DOI: https://doi.org/10.1039/d3cp03420h

IF: 3.3

2023-08-17

Physical Chemistry Chemical Physics

Abstract:Inspired by the groundbreaking discovery of the 2H-MoS 2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX 2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX 2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX 2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born–Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX 2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m −1 K −1 are discovered for 2H-CrS 2 and 2H-CrSe 2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Grüneisen parameter shows that the high lattice thermal conductivities of 2H-CrX 2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS 2 and 2H-CrSe 2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX 2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.

chemistry, physical,physics, atomic, molecular & chemical
Prediction of Single-Layer Antimony Oxyselenide (Sb2O2Se2): Metal-to-Semiconductor Transition via Hydrogenation

yagmur bozkurt,Zebih Cetin,Mehmet Yagmurcukardes

DOI: https://doi.org/10.1088/1361-648x/ad5069

2024-05-25

Journal of Physics Condensed Matter

Abstract:In this study, the structural, electronic, vibrational, and mechanical properties of single-layer Antimony Oxyselenide (Sb 2 O 2 Se 2 ) and its hydrogenated structure (Sb 2 O 2 Se 2 H 2 ) are investigated by performing density functional theory-based first principles calculations. Geometry optimizations reveal that single-layer Sb 2 O 2 Se 2 crystallizes in tetragonal structure which is shown to possess dynamical stability by means of phonon band dispersions. In addition, the mechanical stability of the predicted single layer is satisfied via the linear-elastic parameters. Electronically, it is revealed that single-layer Sb 2 O 2 Se 2 exhibits metallic behavior whose highest occupied states are found to arise from the surface Se atoms, may be an indication for tuning the electronic features via surface functionalization. For the surface modification of Sb 2 O 2 Se 2 , top of each Se atom is saturated with a H atom and fully hydrogenated single-layer Sb 2 O 2 Se 2 H 2 is shown to be an in-plane anisotropic structure. In addition, it is found that the existence of tilted H atoms on the surface can be detected via Scanning Tunneling Microscopy (STM) images. Phonon band dispersion calculations indicate the dynamical stability of Sb 2 O 2 Se 2 H 2 . Mechanically stable Sb 2 O 2 Se 2 H 2 is found to possess anisotropic linear-elastic behavior, which is much softer than its pristine structure. Moreover, electronically a metallic-to-semiconducting transition is shown to occur as the unoccupied Se-orbitals are saturated via H atoms. Our work offers insights into prediction of a novel single-layer material, namely Sb 2 O 2 Se 2 , and reports the chemically-driven semiconducting behavior via hydrogenation, which may lead to the use of hydrogenated structure in solar cell, photoelectrode, or photocatalyst applications.

physics, condensed matter
First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)

Hanen Alhussain,Hela Ferjani,Youssef Ben Smida

DOI: https://doi.org/10.1002/crat.202300340

2024-02-28

Crystal Research and Technology

Abstract:This study employs Density Functional Theory (DFT) to investigate the Tl2SnX3 series (X = S, Se, Te), revealing a direct relationship between chalcogen substitution and semiconductor properties. Key findings include narrowing bandgaps with heavier chalcogens, enhanced optical activity, and superior light‐matter interaction in Tl2SnTe3, highlighting its potential in optoelectronic applications such as photovoltaics and infrared photodetectors. In this work, the Density Functional Theory (DFT) analysis of the Tl2SnX3 series (X = S, Se, Te) is performed, and the ground states are confirmed by the calculation of the elastic constant Cij. Based on the DFT calculation, the Tl2SnX3 structures are direct‐gap semiconductors with bandgaps of 1.434, 1.181, and 0.907 eV, respectively. Chalcogen substitution significantly impacts their electronic structures, notably increasing the Density of States (DOS) width in the valence band from sulfur to tellurium, and shifting the dielectric function's real part, ε1(ω), toward lower energies. This change means that the optical activity and response to electric fields are better, with Tl2SnTe3 showing the best polarization response and light‐matter interaction abilities. Optical tests show that Tl2SnTe3 has very high optical absorption, peaking at ≈17 × 104 cm−1 along [010], and reflectivity levels above 90%, marking its suitability for high‐reflectivity applications. Moreover, loss energy function analysis also shows that Tl2SnTe3 has a strong electron loss resonance at lower energies, which means it has strong interactions with electrons.

crystallography
Ab-initio simulation of ferromagnetic chalcogenide CdCe2X4 (X = S, Se) spinels for optoelectronic applications

,M. Zanib,M. A. Yasir,,N. A. Noor,,S. Mumtaz,,Mohammad K. Al-Sadoon,

DOI: https://doi.org/10.15251/cl.2024.219.695

2024-09-27

Chalcogenide Letters

Abstract:DFT approach was employed to examine the mechanical and optoelectronic properties of CdCe2X4 (X = S, Se) for investigating their fundamental attributes leading to the FM semiconducting capabilities. In this letter, we computed the precise spin-polarized electrical characteristics using mBJ potential and evaluated the physical and mechanical features via PBEsol-GGA functional. The materials' brittleness has been disclosed by the obtained elastic parameters and related components. According to the analysis of band structure configuration and density of states plots, the aforementioned composites are accounted to be the most durable. In the FM phase, these compounds’ durability is because of rare earth Ce ions’ exchange splitting within the crystal structure, which is prompted by p-d hybridization. Band exchange splitting has been significantly affected by the participation among impurity cations and resident anions as well as by their spin, charge, and magnetism. In addition, the present study entailed a thorough analysis of the dielectric parameter, which in turn gained insight into the compound's spectral behavior. FM semiconducting features played vital role in scientific improvements of photovoltaic appliances. The parameters estimated in the current investigation might help scientists to explore modifications in the functionality of CdCe2X4 (X = S, Se).

materials science, multidisciplinary,physics, applied
Two-dimensional BiSbTeX2 (X = S, Se, Te) and their Janus monolayers as efficient thermoelectric materials

K M Sujata,Poonam Chauhan,Nidhi Verma,Rekha Garg Solanki,Ashok Kumar

DOI: https://doi.org/10.1039/d4cp02750g

2024-10-30

Abstract:Today, there is a huge need for highly efficient and sustainable energy resources to tackle environmental degradation and energy crisis. We have analyzed the electronic, mechanical and thermoelectric (TE) characteristics of two-dimensional (2D) BiSbTeX2 (X = S, Se and Te) and Janus BiSbTeXY (X/Y = S, Se and Te) monolayers by implementing first principles simulations. These monolayers' dynamic stability and thermal stability have been demonstrated through phonon dispersion spectra and ab initio molecular dynamics (AIMD) simulations, respectively. The band structure of these monolayers can be tuned by applying uniaxial and biaxial strains. The investigated lattice thermal conductivity (κl) for these monolayers lies between 0.23 and 0.37 W m-1 K-1 at 300 K. For a more precise calculation of the scattering rate, we implemented electron-phonon coupling (EPC) and spin-orbit coupling effects to calculate the transport properties. For p(n)-type carriers, the power factor of these monolayers is predicted to be as high as 2.08 × 10-3 W m-1 K-2 and (0.47 × 10-3 W m-1 K-2) at 300 K. The higher thermoelectric figure of merit (ZT) of p-type carriers at 300 K is obtained because of their very low value of κl and high power factor. Our theoretical investigation predicts that these monolayers can be potential candidates for fabricating highly efficient thermoelectric power generators.

[Construction of metallic covering for unitary metallic ceramic crowns without going through a wax procedure].

Stability, electronic, phonon, thermal and optical properties of SrX (X=S, Se) nanosheet based on AIMD and DFT computations

As2S3, As2Se3 and As2Te3 nanosheets: Superstretchable semiconductors with anisotropic carrier mobilities and optical properties

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Prediction of BiS 2 -type pnictogen dichalcogenide monolayers for optoelectronics

First-Principles Prediction of Graphene-Like XBi (X=Si, Ge, Sn) Nanosheets

Prediction of new Group IV-V-VI monolayer semiconductors based on first principle calculation

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

2D V–VI Binary Nanosheets with Square Lattice: A Theoretical Investigation

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

Ternary mixed-anion semiconductors with tunable band gaps from machine-learning and crystal structure prediction

First-principles study on stability, electronic and optical properties of 2D SbXY (X=Se/Te, Y=I/Br)Janus layers

First-principles study of the electron and phonon transport properties in monolayer boron monosulfide

A DFT Study of Bandgap Engineering and Tuning of Structural, Electronic, Optical, Mechanical and Transport Properties of Novel [Ba4Sb4Se11]: Sr3+ Selenoantimonate for Optoelectronic and Energy Exploitations

Enhancing phonon thermal transport in 2H-CrX2 (X = S and Se) monolayers through robust bonding interactions

Electronic, optical, and thermoelectric behaviour of KCuX (X = S, Se, Te) monolayers

Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions

Prediction of Single-Layer Antimony Oxyselenide (Sb2O2Se2): Metal-to-Semiconductor Transition via Hydrogenation

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)

Ab-initio simulation of ferromagnetic chalcogenide CdCe2X4 (X = S, Se) spinels for optoelectronic applications

Two-dimensional BiSbTeX2 (X = S, Se, Te) and their Janus monolayers as efficient thermoelectric materials