Abstract:Motivated by the exceptional optoelectronic properties of 2D Janus layers (JLs), we explore the properties of group Va antimony-based JLs SbXY (X=Se/Te, Y=I/Br). From the Bader charges, the elec-tric dipole moment in the out-of-plane direction of all the JLs is studied and the largest dipole momentis found to be in the SbSeI JL. Our results on the formation energy, phonon spectra, elastic constants, and ab initio molecular dynamic (AIMD) simulation, predict the energetic, vibrational, mechanical,and thermal stability of JLs. After confirming the stability, the three-dimensional phase diagram isinvestigated to propose the experimental conditions required to fabricate the predicted JLs. Then,the electronic band structure is calculated using different levels of theory namely generalized gradi- ent approximation (GGA), GGA+ spin-orbit coupling (GGA+SOC), hybrid Heyd-Scuseria-Ernzerhof(HSE), and many-body perturbation theory-based Green's function method (GW). According to the HSE results, JLs show band gaps between 1.653 and 1.852 eV. The GGA+SOC calculations reveal Rashba spin splitting in these JLs. The calculated carrier mobility using deformation potential the- ory shows that the electrons have exceptionally high mobility compared to holes, which assists the spatial separation of both charge carriers. The optical spectra are determined using GGA, HSE, andGW methods. With respect to GGA results, HSE and GW optical spectra show a blue shift. Moreaccurate calculations by the GW-Bethe Salpeter equation (BSE) yield optical absorption spectra which are dominated by strong excitonic effects with excitonic binding energy (BEex) in the rangeof 550-800 meV. Compared to GW-BSE, the Mott-Wannier (MW) model predicts lower BEex. The strong e-h coupling is observed for dispersions along K − M in the Brillouin zone from the fat band analysis. From our study, SbSeI JL is a potential candidate for photocatalytic and photovoltaic applications due to its largest dipole moment and low excitonic binding energy.

Stability, electronic, phonon, thermal and optical properties of SrX (X=S, Se) nanosheet based on AIMD and DFT computations

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

As2S3, As2Se3 and As2Te3 nanosheets: Superstretchable semiconductors with anisotropic carrier mobilities and optical properties

Structural, Mechanical, Electronic, Optical, and Thermodynamic Properties of New Oxychalcogenide A2O2B2Se3 (A = Sr, Ba; B = Bi, Sb) Compounds: A First-Principles Study

Optical Properties of Srse Thin Films Grown by Molecular Beam Epitaxy

2D V–VI Binary Nanosheets with Square Lattice: A Theoretical Investigation

First-principles study on stability, electronic and optical properties of 2D SbXY (X=Se/Te, Y=I/Br)Janus layers

Exploring electronic, optical, and phononic properties of MgX (X=C, N, and O) monolayers using first principle calculations

Microstructure and Optical Properties of Pb_(1-x)Sr_xSe Thin Films

First principle investigation of structural, electronic, optical and thermoelectric properties of Chalcogenide Sr2GeX4(X=S, Se)

In-depth Analysis of Ternary NaCuX (X = Se and Te) Chalcogenides: Bridging Structural Elastic, Electronic, and Optical Properties

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

Newly synthesized 3D boron-rich chalcogenides B12X (X = S, Se): Theoretical characterization of physical properties for optoelectronic and mechanical applications

First-Principles Prediction of Graphene-Like XBi (X=Si, Ge, Sn) Nanosheets

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)

Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions

Enhancing phonon thermal transport in 2H-CrX2 (X = S and Se) monolayers through robust bonding interactions

A DFT study of structural, optical, and elastic properties of the transition metal chalcogenide compounds SrXSe3 (X = Ti or Zr)

Ab-initio simulation of ferromagnetic chalcogenide CdCe2X4 (X = S, Se) spinels for optoelectronic applications

From Metals to Semiconductors: Advancing MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te) Compounds with Strain Engineering—A Computational Perspective

Exploring the structural stability, electronic and thermal attributes of synthetic 2D materials and their heterostructures