Abstract:[Formula: see text] and [Formula: see text] are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for [Formula: see text], [Formula: see text] and [Formula: see text] monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped [Formula: see text], [Formula: see text], and [Formula: see text], respectively. This study highlights the bright prospect for the application of [Formula: see text], [Formula: see text] and [Formula: see text] nanosheets in novel electronic, optical and energy conversion systems.

Group III (In/Ga)-V (P/As)-VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties

Prediction of new Group IV-V-VI monolayer semiconductors based on first principle calculation

Prediction of 2D IV-VI Semiconductors: Auxetic Materials with Direct Bandgap and Strong Optical Absorption

Structural and electronic properties of monolayer group III-VII compounds: A first-principle study

Prediction of 2D IV–VI semiconductors: auxetic materials with direct-gap and strong optical absorption

Electronic Properties of Two-Dimensional IV–V Group Materials from Density Functional Theory

First-principles Study of Electronic, Optical and Thermal Transport Properties of Group III–VI Monolayer MX (M = Ga, In; X = S, Se)

Monolayer Ii-Vi Semiconductors: A First-Principles Prediction

Intercalated Architecture of the Ca2A2Z5 Monolayer with High Electron Mobilities and High Power Conversion Efficiencies

2D V–VI Binary Nanosheets with Square Lattice: A Theoretical Investigation

New Group V Elemental Bilayers : A Tunable Structure Model with 4 , 6 , 8-atom Rings

Atomically thin group v elemental films: theoretical investigations of antimonene allotropes

New Group-V Elemental Bilayers: A Tunable Structure Model with Four-, Six-, and Eight-Atom Rings

A g-SiC 6 monolayer and its analogs: A new class of tunable Dirac cone materials and novel quantum spin Hall insulators

Strain engineering of electronic, mechanical, and optical properties of orthorhombic III–V group monolayers by first principles calculations

Group IVA of 2D Xenes materials (Silicene, Germanene, Stanene, Plumbene)

First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer

Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction

New Layered II–III–VI Semiconductors: Promising Materials for High Performance Solar Cells

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Tunable electronic and dielectric behavior of GaS and GaSe monolayers.