Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Shuai Yang,Fengrui Sui,Yucheng Liu,Ruijuan Qi,Xiaoyu Feng,Shangwei Dong,Pingxiong Yang,Fangyu Yue
DOI: https://doi.org/10.1039/d3nr02678g
IF: 6.7
2023-01-01
Nanoscale
Abstract:Low-symmetric GeTe semiconductor has attracted wide attention due to its excellent optical and thermal properties, but few researches are accessible about the in-plane optical anisotropic property that is crucial for...
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?