Abstract:Anisotropic thermoelectric properties are studied in Ge1‐xInxSb2Te4 single crystals. The impurity band introduced by In‐doping enhances the Seebeck coefficient, while the strong anharmonicity caused by the weak chemical bonding and the mixed occupancy of Ge/Sb atoms on cation sites leads to low lattice thermal conductivity. Finally, zTmax and zTave of 1 and 0.68 are obtained along c‐axis. Layer‐structured GeSb2Te4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties is still not clear. In this study, Ge1–xInxSb2Te4 single crystals are grown by Bridgman method, and their anisotropic thermoelectric properties are systematically investigated. Lower electrical conductivity and higher Seebeck coefficient are observed in the c‐axis due to the higher effective mass in this direction. Intrinsically low lattice thermal conductivity is also observed in the c‐axis due to the weak chemical bonding and the strong lattice anharmonicity proved by density functional theory calculation. Indium doping introduces an impurity band in the bandgap of GeSb2Te4 and leads to the locally distorted density of states near the Fermi level, which contributes to enhanced Seebeck coefficient and improved power factor. Ultimately, a peak zT value of 1 at 673 K and an average zT value of 0.68 within 323–773 K are obtained in Ge0.93In0.07Sb2Te4 along the c‐axis direction, which are 54% and 79% higher than that of the pristine GeSb2Te4 single crystal, respectively. This work clarified the origin of intrinsic low lattice thermal conductivity and anisotropy transport properties in GeSb2Te4, and shed light on the performance optimization of other layered thermoelectric materials.

Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Thermoelectric Performance Optimization and Phase Transition of GeTe by Alloying with Orthorhombic CuSbSe 2

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Are Cu2Te‐Based Compounds Excellent Thermoelectric Materials?

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

High Thermoelectric Performance of New Rhombohedral Phase of GeSe Stabilized Through Alloying with AgSbSe2

Anisotropic Thermoelectric Properties of N-Type Te-Free (bi, Sb)2Se3 with Orthorhombic Structure

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Enhanced thermoelectric performance in GeTe-Sb2Te3 pseudo-binary via lattice symmetry regulation and microstructure stabilization

Anisotropic Thermoelectric Properties of GeTe Single Crystal

Anomalous Enhancement of Thermoelectric Performance in GeTe with Specific Interaxial Angle and Atomic Displacement Synergy

Achieving Superior Thermoelectric Performance in Ge4Se3Te Via Symmetry Manipulation with I–V–VI2 Alloying

High Thermoelectric Performance of Ge–Sb–Te Nanosheets: A Density Functional Study