Strain-engineering on GeSe: Raman spectroscopy study

Jin-Jin Wang,Yi-Feng Zhao,Jun-Ding Zheng,Xiao-Ting Wang,Xing Deng,Zhao Guan,Ru-Ru Ma,Ni Zhong,Fang-Yu Yue,Zhong-Ming Wei,Ping-Hua Xiang,Chun-Gang Duan
DOI: https://doi.org/10.1039/d1cp03721h
IF: 3.3
2021-01-01
Physical Chemistry Chemical Physics
Abstract:GeSe has unique photoelectric properties and an adjustable band gap. We report a detailed anisotropic Raman study of GeSe flakes under uniaxial tension strain. We achieved effective control of the GeSe lattice, modulating its anisotropic electric and optical properties.
chemistry, physical,physics, atomic, molecular & chemical
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