Abstract:So far, layered PdSe2 has attracted much attention due to its completely tunable band-gap with varying layer numbers, yet the thickness-dependent transporting properties have been rarely studied. We have systematically studied the electronic structures, phonon and charge transport properties, and thermoelectric properties of few-layered (from 1L to 4L) and bulk PdSe2 by first-principles calculations and Boltzmann transport theory. As the thickness increases, the energy levels of band edges relative to 4s of selenium move oppositely due to their different bonding states, leading to the power-law decrease of the band-gap. Meanwhile, the electron effective mass decreases rapidly while the hole effective mass increases significantly compared with those unperturbed. Calculations on elastic constants reveal that both bulk and few-layered PdSe2 are mechanically stable, and the bulk is ductile with a Poisson's ratio of 0.27. The shifts of Raman active modes with respect to the thickness as well as their Gruneisen parameters are analyzed and the underlying physics is discussed. At room temperature, the thermal conductivities of the bulk are 7.7, 10.1 and 0.9 W m-1 K-1 along the a, b and c axes, respectively. It is found that the low-frequency modes (<2.0 THz) contribute about 80% of in-plane thermal conductivities. Due to the enhanced contribution from the ZA mode, the thermal conductivity of few-layered PdSe2 is much larger than that of the bulk. The ZA mode is mainly scattered by itself and the Umklapp scattering dominates in the process as the thickness increases. Calculations on charge transport reveal that the electron mobility increases from 2.5-13.2 (1L) to 121.9-167.8 (4L) cm2 V-1 s-1 with the decreasing anisotropy μb/μa, while the hole mobility remains to be ∼20 cm2 V-1 s-1, which is in good agreement with the experimental results. Calculations on the thermoelectric properties reveal that the ZT value as well as the power factor increases largely as the thickness increases and it gets to be optimum for the triple layer. Interestingly, the transport of electrons and phonons is decoupled along the out-of-plane direction, which makes bulk PdSe2 exhibit good thermoelectric performance along the c axis.

In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2

Unravelling the Origin of Thermal Anisotropy in PdSe2

Giant Anisotropic In-Plane Thermal Conduction Induced by Anomalous Phonons in Pentagonal PdSe2

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

Low‐Symmetry PdSe2 for High Performance Thermoelectric Applications

Low‐Symmetry PdSe 2 for High Performance Thermoelectric Applications

Abnormal Thickness-Dependent Thermal Transport in Suspended 2D PdSe2

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP2

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

Field‐Effect Transistors: Low‐Symmetry PdSe 2 for High Performance Thermoelectric Applications (Adv. Funct. Mater. 52/2020)

In‐Plane Optical Anisotropy of Low‐Symmetry 2D GeSe

In-Plane Anisotropic Thermal Conductivity of Few-Layered Transition Metal Dichalcogenide Td-WTe2

Two-dimensional pentagonal material Penta-PdPSe: A first-principle study

Thickness-dependent Anisotropic Transport of Phonons and Charges in Few-Layered PdSe2

Penta ‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic Anisotropy

2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Synthesis Of Low-Symmetry 2d Ge(1-X)Snxse2 Alloy Flakes With Anisotropic Optical Response And Birefringence