Abstract:Layered transition-metal dichalcogenides (TMDs) constitute an emerging class of materials that provide researchers a platform to realize fundamental studies and to design promising optoelectronic devices. While defects are an almost unavoidable part of TMDs, they bring additional interesting properties absent in defect-free layers. Moreover, the controlled introduction of defects in TMDs makes it possible to tailor the electromagnetic properties of the materials. Here we report defect-induced properties of single-layer PdSe2 and demonstrate the emergence of magnetism at the nanoscale. Our first-principle calculations indicate that Se vacancies create in-gap defect states, which can be responsible for trapping of carriers. The complex square VPd+4Se vacancy induces spin-polarized states with a total local magnetic moment of 2μB per defect, making it possible to introduce magnetization into PdSe2 and therefore expand the family of two-dimensional (2D) magnets. The defect formation energies are much lower compared to many other TMD materials that can explain the presence of a large number of Se defects after mechanical exfoliation of PdSe2 layers, while the central location of the Pd atoms preserves them from exfoliation-induced defect formation. The negatively charged vacancies are prone to form and in many cases demonstrate spin-polarized states. The small diffusion barrier of VSe in 2D PdSe2 leads to an easy room-temperature migration, while VPd demonstrates a high diffusion barrier preventing its spontaneous migration. As a guide for experimentalists, we simulate and characterize scanning tunneling microscope images in valence and conduction states and estimate the electron-beam energy for a controllable production of various defect patterns. These intriguing findings make PdSe2 an ideal platform to study defect-induced phenomena.

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

Observation of the anomalous Hall effect in a layered polar semiconductor

In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2

Modulating Anisotropic Magnetism of Layered CuCrP_2S_6 Single Crystal Via Selenium Substitution

Understanding and tuning magnetism in layered Ising-type antiferromagnet FePSe3 for potential 2D magnet

Modulating Anisotropic Magnetism of Layered CuCrP$_{2}$S$_{6}$ Single Crystal via Selenium Substitution

Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

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Weak ferromagnetism and magnetoelectric coupling in van der Waals antiferromagnet MnPSe3

Anisotropic Magnetoresistance Effect of Intercalated Ferromagnet FeTa3S6

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

High-performance Polarization-Sensitive Photodetector Based on a Few-Layered PdSe 2 Nanosheet

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Giant Anisotropic Magnetoresistance in Magnetic Monolayers CrPX3 (X = S, Se, Te) due to symmetry breaking between the in-plane and out-of-plane crystallographic axes

Giant Optical Anisotropy Induced by Magnetic Order in FePS3/WSe2 Heterostructures

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Anisotropic positive linear and sub-linear magnetoresistivity in the cubic type-II Dirac metal Pd$_3$In$_7$

Unveiling magnetism in individual CuCrP2S6 flakes by magnetic proximity effect

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition