Planar penta-transition metal phosphide and arsenide as narrow-bandgap semiconductors from first principle calculations

Jun-Hui Yuan,Biao Zhang,Ya-Qian Song,Jia-Fu Wang,Kan-Hao Xue,Xiang-Shui Miao
DOI: https://doi.org/10.1007/s10853-019-03380-4
2018-11-12
Abstract:Searching for materials with single atom-thin as well as planar structure, like graphene and borophene, is one of the most attractive themes in two dimensional materials. Herein, using density functional theory calculations, we have proposed a series of single layer planar penta-transition metal phosphide and arsenide, i.e. TM$\mathrm{_2}$X$\mathrm{_4}$ (TM= Ni, Pd and Pt; X=P, As). According to the calculated phonon dispersion relation and elastic constants, as well as ab initio molecular dynamics simulation results, monolayers of planar penta-TM$\mathrm{_2}$X$\mathrm{_4}$ are dynamically, mechanically, and thermally stable. In addition, the band structures calculated with the screened HSE06 hybrid functional including spin-orbit coupling show that these monolayers are direct-gap semiconductors with sizeable band gaps ranging from 0.14 eV to 0.69 eV. Besides, the optical properties in these monolayers are further investigated, where strong in-plane optical absorption with wide spectral range has been revealed. Our results indicate that planar penta-TM$\mathrm{_2}$X$\mathrm{_4}$ monolayers are interesting narrow gap semiconductors with excellent optical properties, and may find potential applications in photoelectronics.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the stability and electronic properties of a series of new two - dimensional materials - planar quinary transition - metal phosphides and arsenides (i.e., TM2X4, where TM represents Ni, Pd, and Pt; X represents P or As). Specifically, through first - principles calculations, the researchers systematically studied the structural stability, electronic structure, and optical properties of these materials to evaluate their potential as materials for optoelectronic applications. The solution of these problems is of great significance for the development of new two - dimensional semiconductor materials and their applications in optoelectronic devices.