Abstract:Two-dimensional (2D) pentagonal materials as the next-generation nanoelectronic devices are promising candidates due to their interesting structures and novel electronic, mechanical, optical and other properties. Penta-NiN2, a newly synthesized material with pentagonal atomic arrangement under high pressure (ACS Nano 15 (2021), 13539), has also sparked considerable interest. This study systematically investigates the effects of the biaxial strain on monolayer PtN2 (penta-NiN2) electronic structure applying first-principles computational approaches. Furthermore, combining the non-equilibrium Green's function (NEGF) approach, we research the optoelectronic and transport properties of penta-NiN2 (PtN2). The results indicate that biaxial strain can effectively modulate the bandgap of penta-NiN2 (PtN2), particularly achieving a semiconductor-to-metal transition under compressive strain. Moreover, tensile and compressive strains effectively enhance the optical characteristics of penta-NiN2 (PtN2) in visible light range. Under tensile and compressive strains, the absorption peak of penta-NiN2 shows a red shift and a blue shift in visible region, respectively. The pin-junction photodiode of penta-NiN2 (PtN2) exhibit significant photocurrent under illumination. The strongest photocurrent is observed in penta-NiN2 photodiodes under -3% compressive strain, showing the highest response to yellow light. Under the tensile stress of 7% and compressive stress of -3%, the photocurrent of the Penta-PtN2 photodiode is enhanced in the yellow and green light regions. Additionally, applying compressive strain reduces the bandgap of penta-NiN2 (PtN2), significantly enhancing its transport properties and thereby inducing a switch effect in devices. In summary, our study demonstrates that penta-XN2 (X=Ni, Pt) is a promising material in the fields of nanoelectronics and optoelectronic devices.

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