Prediction of highly stable two-dimensional materials of boron and phosphorus: structural and electronic properties

Puxin Cheng,Geng Li,Shuming Zeng,Yunlong Li,Xiangfei Meng,Jialiang Xu
DOI: https://doi.org/10.1039/d2cp03243k
IF: 3.3
2022-01-01
Physical Chemistry Chemical Physics
Abstract:The discovery of two-dimensional (2D) semiconducting materials has attracted broad research interest, owing to their wide applications in spintronics and optoelectronics. Group III-V 2D materials such as hexagonal boron nitride (h-BN) have been demonstrated with remarkable electronic properties. However, the 2D materials consisting of boron and phosphorus have not been comprehensively explored. Using global structural search combined with first-principles calculations, we have hereby theoretically predicted several stable and metastable boron phosphorus (BmPn) monolayer 2D compounds that have lower formation enthalpies (Delta H) than black phosphorus and alpha-bulk boron and could be formed at stoichiometries of m/n <= 1. Two of these 2D BmPn compounds, i.e., P2(1)/m B1P3 and Cm B2P4, are confirmed to be thermodynamically stable, with bandgaps less than 2 eV. In particular, Cm B2P4 features a narrow bandgap of similar to 0.609 eV, near the short wavelength infrared ray (SWIR) region, and it possesses anisotropic mechanical properties. Moreover, we have demonstrated that these compounds can be converted into half-metallic spin-polarized states through charge doping, which promises their applications in spintronic devices.
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