Abstract:New allotropes of two-dimensional (2D) GaP and InP binary compounds were predicted from the structural optimization and dynamical stability analysis in the framework of the density functional calculations. These stabilized GaP and InP monolayers possess unique high buckled orthorhombic lattices symmetry with their cohesive energies of ~0.14 and ~0.17 eV/pair lower than those of 2D low buckled honeycomb GaP and InP binary compounds, demonstrating that these newly predicted 2D GaP and InP binary compounds are energetically preferential. More interesting, their energy band gaps are even ~ 0.52 eV (for GaP) and ~1.49 eV (for InP) wider than their bulk counterparts. Such band gaps are also tunable under the strain along armchair/zigzag direction, and the direct/indirect band gap transitions occur under certain strain, providing their promising applications in band gap engineering for nanoscale electronic and optoelectronic devices. A feasible way to synthesize these novel 2D phosphide compounds is also provided in this study.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are to explore and predict the monolayer structures of new two - dimensional phosphide compounds (GaP and InP) with tunable band gaps and anisotropic physical properties. Specifically, the main research problems include: 1. **Discovering new 2D GaP and InP monolayer structures**: - Besides the known low - wrinkled honeycomb structure, are there other more stable 2D GaP and InP monolayer structures? - Do these new structures have unique electronic, mechanical, and other physical properties? 2. **Band - gap characteristics and tunability**: - What are the band - gap widths of the newly discovered 2D GaP and InP monolayer structures? How do they compare with their bulk materials? - Can these band - gaps be regulated by strain? If so, what are the specific regulation mechanisms? 3. **Anisotropic physical properties**: - Do the physical properties such as the speed of sound, Young's modulus, and nonlinear elastic modulus of the new structures in different directions show significant anisotropy? - What is the impact of this anisotropy on potential applications? 4. **Theoretical calculations and simulations**: - Use first - principles molecular dynamics simulations to verify the stability and physical properties of these new structures. - Propose a feasible path to realize these new 2D phosphide compounds. Through the research of these problems, the author aims to provide important theoretical guidance and experimental basis for strain - induced band - gap engineering in the fields of nanoelectronics, optoelectronics, and photovoltaics. ### Formula summary - **Position parameters of highly wrinkled orthogonal 2D GaP/InP monolayer structures**: \[ v_1=(0, 0, 0), \quad v_2 = \left(\frac{a}{2}, \frac{b}{2}, z_1\right), \quad v_3=\left(\frac{a}{2}, \frac{b}{2}, -z_1\right), \quad v_4=\left(0, b, z_2\right) \] where \[ z_1 = -\frac{b_v}{2}+\Delta z, \quad z_2=\frac{b_v}{2}+\Delta z \] - **Strain energy density function**: \[ \Psi(\varepsilon)=\frac{E_{\text{total}}(\varepsilon)-E_{\text{total}}(0)}{A_{\text{cell}}} \] where \(E_{\text{total}}(\varepsilon)\) and \(E_{\text{total}}(0)\) are the total energies with and without strain respectively, and \(A_{\text{cell}}\) is the cell area at zero strain. The solution of these problems will be helpful for developing new two - dimensional materials with specific physical properties and promoting the development of nanoelectronics and optoelectronics.

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