Abstract:The existence of two novel hybrid two-dimensional (2D) monolayers, 2D B3C2P3 and 2D B2C4P2, has been predicted based on the density functional theory calculations. It has been shown that these materials possess structural and thermodynamic stability. 2D B3C2P3 is a moderate band gap semiconductor, while 2D B2C4P2 is a zero band gap semiconductor. It has also been shown that 2D B3C2P3 has a highly tunable band gap under the effect of strain and substrate engineering. Moreover, 2D B3C2P3 produces low barriers for dissociation of water and hydrogen molecules on its surface, and shows fast recovery after desorption of the molecules. The novel materials can be fabricated by carbon doping of boron phosphide, and directly by arc discharge and laser ablation and vaporization. Applications of 2D B3C2P3 in renewable energy and straintronic nanodevices have been proposed.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are to predict the existence of two new two - dimensional hybrid monolayer materials (2D B₃C₂P₃ and 2D B₂C₄P₂) and their basic properties, including structural stability, thermodynamic stability, electronic structure and mechanical properties. Through density functional theory (DFT) calculations, the authors demonstrate the structural and thermodynamic stabilities of these materials and explore their potential in renewable energy applications, especially the ability of 2D B₃C₂P₃ to modulate its electronic structure under the influence of strain engineering and substrate engineering and its catalytic activity. Specifically, the paper focuses on the following aspects: 1. **Prediction and Verification of New Materials**: - Predict the existence of two new two - dimensional materials (2D B₃C₂P₃ and 2D B₂C₄P₂) through DFT calculations. - Verify the structural and thermodynamic stabilities of these materials. 2. **Electronic Structure and Band - Gap Characteristics**: - Study the electronic structure of 2D B₃C₂P₃ and find that it is a medium - band - gap semiconductor, while 2D B₂C₄P₂ is a zero - band - gap semiconductor. - Explore the tunability of the band - gap of 2D B₃C₂P₃ under strain. 3. **Catalytic Performance**: - Analyze the adsorption behavior of 2D B₃C₂P₃ for water molecules and hydrogen molecules and find that it has a low dissociation energy barrier and a rapid recovery ability. - Discuss the potential applications of 2D B₃C₂P₃ in photocatalysis and hydrogen storage devices. 4. **Synthesis Methods**: - Propose methods for directly synthesizing these materials through carbon - doped boron phosphide and arc discharge, laser ablation and evaporation techniques. 5. **Application Prospects**: - Based on the above research results, propose the application prospects of 2D B₃C₂P₃ in renewable energy and strained electronic nano - devices. Through these studies, the paper not only provides a theoretical basis for the design and synthesis of new two - dimensional materials, but also points out the direction for the development and utilization of these materials in practical applications.

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