Abstract:The monolayer arsenic in the puckered honeycomb structure was recently predicted to be a stable two-dimensional layered semiconductor and therefore named arsenene. Unfortunately, it has an indirect band gap, which limits its practical application. Using first-principles calculations, we show that the band gaps of few-layer arsenic have an indirect-direct transition as the number of arsenic layers (n) increases from n=1 to n=2. As n increases from n=2 to infinity, the stacking of the puckered honeycomb arsenic layers forms the orthorhombic arsenic crystal (-As, arsenolamprite), which has a similar structure to the black phosphorus and also has a direct band gap. This indirect-direct transition stems from the distinct quantum-confinement effect on the indirect and direct band-edge states with different wavefunction distribution. The strain effect on these electronic states is also studied, showing that the in-plane strains can induce very different shift of the indirect and direct band edges, and thus inducing an indirect-direct band gap transition too. The band gap dependence on strain is non-monotonic, with both positive and negative deformation potentials. Although the gap of arsenene opens between As p-p bands, the spin-orbit interaction decreases the gap by only 0.02 eV, which is much smaller than the decrease in GaAs with an s-p band gap. The calculated band gaps of arsenene and e-As using the hybrid functional are 1.4 and 0.4 eV respectively, which are comparable to those of phosphorene and black phosphorus.

Puckered Arsenene: A Promising Room-Temperature Thermoelectric Material from First-Principles Prediction

Lattice Thermal Conductivity of Monolayer AsP from First-Principles Molecular Dynamics

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Chemical intuition for high thermoelectric performance in monolayer black phosphorus, alpha-arsenene and aW-antimonene

Anisotropic thermoelectric properties of Weyl semimetal NbX (X = P and As): a potential thermoelectric material.

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

New Two-Dimensional Arsenene Polymorph Predicted by First-Principles Calculation: Robust Direct Bandgap and Enhanced Optical Adsorption

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

Two-Dimensional Arsenic Monolayer Sheet Predicted from First-Principles

First-principle Study of Puckered Arsenene MOSFET

Honeycomb-like puckered PbSe with wide bandgap as promising thermoelectric material: a first-principles prediction

Indirect-direct Band Gap Transition of Two-Dimensional Arsenic Layered Semiconductors—cousins of Black Phosphorus

Honeycomb-like puckered PbSe with wide band gap as promising thermoelectric material: A first-principles prediction

Prediction of intrinsic ferroelectricity and large piezoelectricity in monolayer arsenic chalcogenides

2D Arsenene and Arsenic Materials: Fundamental Properties, Preparation, and Applications

Theoretical studies on tunable electronic structures and potential applications of two-dimensional arsenene-based materials

First-Principles Calculations of Mechanical and Thermoelectric Properties of 2D GeAs: Implications for Flexible Thermoelectric Devices

First-Principles Investigation of Organic Semiconductors for Thermoelectric Applications

Hydrogenated arsenenes as planar magnet and Dirac material