Abstract:The monolayer arsenic in the puckered honeycomb structure was recently predicted to be a stable two-dimensional layered semiconductor and therefore named arsenene. Unfortunately, it has an indirect band gap, which limits its practical application. Using first-principles calculations, we show that the band gaps of few-layer arsenic have an indirect-direct transition as the number of arsenic layers (n) increases from n=1 to n=2. As n increases from n=2 to infinity, the stacking of the puckered honeycomb arsenic layers forms the orthorhombic arsenic crystal (-As, arsenolamprite), which has a similar structure to the black phosphorus and also has a direct band gap. This indirect-direct transition stems from the distinct quantum-confinement effect on the indirect and direct band-edge states with different wavefunction distribution. The strain effect on these electronic states is also studied, showing that the in-plane strains can induce very different shift of the indirect and direct band edges, and thus inducing an indirect-direct band gap transition too. The band gap dependence on strain is non-monotonic, with both positive and negative deformation potentials. Although the gap of arsenene opens between As p-p bands, the spin-orbit interaction decreases the gap by only 0.02 eV, which is much smaller than the decrease in GaAs with an s-p band gap. The calculated band gaps of arsenene and e-As using the hybrid functional are 1.4 and 0.4 eV respectively, which are comparable to those of phosphorene and black phosphorus.

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Electronic, Elastic, Optical and Thermal Transport Properties of Penta-Pdas2 Monolayer: First-principles Study

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Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Arsenic Monolayers Formed by Zero-Dimensional Tetrahedral Clusters and One-Dimensional Armchair Nanochains

One‐Dimensional Arsenic Allotropes: Polymerization of Yellow Arsenic Inside Single‐Wall Carbon Nanotubes

Arsenene-Based Heterostructures: Highly Efficient Bifunctional Materials for Photovoltaics and Photocatalytics.

Indirect-direct Band Gap Transition of Two-Dimensional Arsenic Layered Semiconductors—cousins of Black Phosphorus

2D Arsenenes

First‐principle Calculations of Optical Properties of Monolayer Arsenene and Antimonene Allotropes

Optical Identification of Topological Defect Types in Monolayer Arsenene by First-Principles Calculation

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

A New Two-Dimensional Semiconducting Carbon Allotrope with Direct Band Gap: a First-Principles Prediction

Computational Prediction of Phosphorene and Graphene-like AsP3 Monolayers

2D Arsenene and Arsenic Materials: Fundamental Properties, Preparation, and Applications

Theoretical studies on tunable electronic structures and potential applications of two-dimensional arsenene-based materials

Design of Lateral Heterostructure from Arsenene and Antimonene

Computational Prediction to Two-Dimensional SnAs

Quantum Spin Hall Insulators in Functionalized Arsenene (asx, X = F, OH and CH3) Monolayers with Pronounced Light Absorption.