Quantum Transport in Ambipolar Few-layer Black Phosphorus

Gen Long,Denis Maryenko,Sergio Pezzini,Shuigang Xu,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Chun Cheng,Yuan Cai,Uli Zeitler,Ning Wang

DOI: https://doi.org/10.1103/PhysRevB.96.155448

2017-03-29

Abstract:Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $\chi_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **Improve the quantum transport properties of electron - doped (n - type) few - layer black phosphorus (Few - layer black phosphorus, BP), especially realize and study its quantum Hall effect (Quantum Hall Effect, QHE), and explore its spin - resolved Landau levels**.

Specifically, although significant progress has been made in hole - doped (p - type) few - layer black phosphorus, such as the observation of the quantum Hall effect and Shubnikov - de Haas oscillations, in electron - doped few - layer black phosphorus, the research on these phenomena is relatively scarce and the performance is poorer. Therefore, this research aims to reveal new quantum phenomena by improving the quality and device performance of electron - doped few - layer black phosphorus, and provide an ideal platform for quantum spintronics.

### Research Background

1. **Unique Properties of Few - layer Black Phosphorus**:
- Few - layer black phosphorus is a two - dimensional semiconductor with an adjustable direct bandgap.
- Due to its unique electronic properties, few - layer black phosphorus can exhibit significant quantum phenomena and is suitable for the study of emerging correlation phenomena in low - dimensional systems.

2. **Existing Research Progress**:
- In hole - doped few - layer black phosphorus, high - quality devices have been realized, and the quantum Hall effect and Shubnikov - de Haas oscillations have been observed.
- However, in electron - doped few - layer black phosphorus, the device performance is poor and the research on quantum transport phenomena is insufficient.

### Research Objectives

- **Achieve Bipolar Quantum Transport**: Through encapsulation technology and field - effect control, achieve bipolar operation of few - layer black phosphorus devices (i.e., support hole and electron transport simultaneously), and observe the quantum Hall effect in the case of electron doping.
- **Measure Spin Susceptibility**: By making the spin - resolved Landau levels coincide, measure the spin susceptibility of electron - doped few - layer black phosphorus, and explore its spin - related quantum phenomena.

### Key Results

- **Observation of the Quantum Hall Effect under Electron Doping**: For the first time, clearly demonstrated the quantum Hall effect in electron - doped few - layer black phosphorus.
- **Measurement of Spin Susceptibility**: The spin susceptibility of electron - doped few - layer black phosphorus was measured experimentally as \(\chi_s = 1.1\pm0.03\), indicating that it has equally spaced spin - resolved Landau levels.
- **Determination of Effective Mass and g - factor**: The effective mass of electrons \(m^* = 0.39\pm0.03m_0\) and the g - factor \(g^* = 2.8\pm0.2\) were determined, which helps to understand the strong interaction between electrons.

Through these studies, the authors not only verified the high quality and excellent quantum transport properties of electron - doped few - layer black phosphorus, but also provided an important theoretical and experimental basis for future applications in quantum spintronics.