Abstract:We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor to semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore, but follow the $\varepsilon_n\propto \sqrt{nB}$ characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a $\sigma_{xy}\propto 2n$ quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime), and a $\sigma_{xy}\propto 4(n+1/2)$ quantization in the semimetalic phase, characteristic of Dirac systems with non-trivial topology.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the quantum Hall effect in black phosphorus (BP) and its transition from semiconductor to semimetal under the action of vertical electric and magnetic fields. Specifically: 1. **Quantum Hall effect**: In the absence of a bias voltage, an external magnetic field will cause the energy spectrum of the 2D electron gas to be quantized into equally - spaced Landau levels, and the electron and hole bands have different cyclotron frequencies. 2. **Transition from semiconductor to semimetal**: The applied voltage will reduce the band gap and eventually lead to the transition from semiconductor to semimetal. This nontrivial phase transition is characterized by the appearance of a pair of Dirac points in the energy spectrum. Therefore, the Landau levels are no longer equally - spaced but follow the characteristics of Dirac crystals, that is, $\varepsilon_n\propto\sqrt{nB}$. 3. **Calculation of Hall conductivity**: By using the Kubo - Bastin formula and the kernel polynomial method, the Hall conductivity of the system is calculated. The results show that in the band - gap phase (standard quantum Hall effect regime), the Hall conductivity presents a quantization of $\sigma_{xy}\propto 2n$; while in the semimetallic phase, the Hall conductivity presents a quantization of $\sigma_{xy}\propto 4(n + 1/2)$, which is a characteristic of Dirac systems with nontrivial topological structures. ### Specific problem analysis - **Quantum Hall effect**: In the case of no bias voltage, the external magnetic field quantizes the energy spectrum into equally - spaced Landau levels, similar to the behavior of a two - dimensional electron gas (2DEG). - **Effect of electric field**: After applying a vertical electric field, the band gap decreases with the voltage and finally closes at the critical voltage, and Dirac points appear, leading to the transition from semiconductor to semimetal. - **Change of Landau levels**: In the semimetallic phase, the Landau levels are no longer equally - spaced but present the characteristics of Dirac crystals, $\varepsilon_n\propto\sqrt{nB}$. - **Hall conductivity**: Through numerical calculation, it is found that the Hall conductivity has different quantization behaviors in different phases, reflecting the change of the topological properties of the system. ### Summary This research aims to understand the changes in the electronic properties of black phosphorus under strong magnetic and electric fields, especially the transition from semiconductor to semimetal and its impact on the quantum Hall effect. Through theoretical models and numerical calculations, new physical phenomena that occur during this process, such as the formation of Dirac points and the special quantization behavior of Hall conductivity, are revealed.

Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus

Quantum Hall effect in biased black phosphorus

Quantum Hall Effect in Biased Bilayer Graphene

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Pressure-Induced Electronic Transition in Black Phosphorus

Quantum Hall Effect in Black Phosphorus/hBN Heterostructures

Quantum Hall Effect in Black Phosphorus Two-Dimensional Electron System

Magnetic Field-Induced Electronic Phase Transition in the Dirac Semimetal State of Black Phosphorus under Pressure

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Pressure-induced Lifshitz transition in black phosphorus

Quantum Criticality of Excitonic Mott Metal-Insulator Transitions in Black Phosphorus

Plasmons in bias-induced topological phase transition in black phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Hydrostatic Pressure Induced Three-Dimensional Dirac Semimetal in Black Phosphorus

Link between T -Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Dual gate black phosphorus velocity modulated transistor

Quantum Oscillations in Black Phosphorus Two-dimensional Electron Gas

Effect of Zeeman Splitting and Interlayer Bias Potential on Electron Transport in Bilayer Graphene