Abstract:Submitted for the MAR16 Meeting of The American Physical Society Quantum Hall Effect in Black Phosphorus/hBN Heterostructures FANGYUAN YANG, LIKAI LI, Fudan University, Collaborative Innovation Center of Advanced Microstructures, Nanjing, GUO JUN YE, University of Science and Technology of China, Collaborative Innovation Center of Advanced Microstructures, Nanjing, ZUOCHENG ZHANG, Tsinghua University, ZENGWEI ZHU, Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, WEN KAI LOU, Chinese Academy of Sciences, University of Science and Technology of China, LIANG LI, Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, KENJI WATANABE, TAKASHI TANIGUCHI, Advanced Materials Laboratory, National Institute for Materials Science, KAI CHANG, Chinese Academy of Sciences, University of Science and Technology of China, YAYU WANG, Tsinghua University, XIAN HUI CHEN, University of Science and Technology of China, Collaborative Innovation Center of Advanced Microstructures, Nanjing, YUANBO ZHANG, Fudan University, Collaborative Innovation Center of Advanced Microstructures, Nanjing — Black phosphorus field effect transistors have emerged as a new twodimensional electron system (2DES) with high mobility. We achieved high mobilities by placing black phosphorus thin flakes on atomically flat hBN substrates. The mobility is further improved by placing a graphite back gate very close to the 2DES, which screens charged impurities. In this talk, we will present our observation of the integer quantum Hall effect in high mobility black phosphorus 2DEG. Temperature and angular dependent measurements reveal a wealth of information on the charge carriers in this new 2DES. Fangyuan Yang Fudan University, Collaborative Innovation Center of Advanced Microstructures, Nanjing Date submitted: 23 Nov 2015 Electronic form version 1.4

Quantum Hall effect in biased black phosphorus

Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus

Quantum Hall Effect in Biased Bilayer Graphene

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Quantum Hall Effect in Black Phosphorus/hBN Heterostructures

Quantum Hall Effect in Black Phosphorus Two-Dimensional Electron System

Plasmons in bias-induced topological phase transition in black phosphorus

Effect of Zeeman Splitting and Interlayer Bias Potential on Electron Transport in Bilayer Graphene

Dynamical Symmetry Breaking in Fractal Space

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Magnetic Field-Induced Electronic Phase Transition in the Dirac Semimetal State of Black Phosphorus under Pressure

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Pressure-Induced Electronic Transition in Black Phosphorus

Magneto-electronic properties of multilayer black phosphorus

Quantum Oscillations in Black Phosphorus Two-dimensional Electron Gas

Dirac spectrum in gated multilayer black phosphorus nanoribbons

Angle-dependent planar thermal Hall effect by quasi-ballistic phonons in black phosphorus