Abstract:Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1c (valence band minimum Γ8v) downwards (upwards). The present prediction of Γ1c and Γ8v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

Gate-tunable strong-weak localization transition in few-layer black phosphorus.

Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Black Phosphorus Radio-Frequency Transistors

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Gate-tunable Large Spin Polarization in a Few-Layer Black Phosphorus-Based Spintronic Device

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Ambipolar Quantum Transport in Few-Layer Black Phosphorus

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Gate Voltage Dependence of Weak Localization in Bilayer Graphene

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Toward a Realistic Description of Multilayer Black Phosphorus: FromGWapproximation to Large-Scale Tight-Binding Simulations

Electronic and Transport Properties of N -Type Monolayer Black Phosphorus at Low Temperatures