Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Chain Vacancies in 2D Crystals.

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Defect dependent electronic properties of two- dimensional transition metal dichalcogenides (2H, 1T, 1T' phase)

Colossal structural distortion and interlayer-coupling suppression in a van der Waals crystal induced by atomic vacancies

Electronic and Magnetic Properties of Graphene, Silicene and Germanene with Varying Vacancy Concentration

Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe<sub>2</sub>

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Electronic Properties of Defective Janus MoSSe Monolayer

Atomic Structure of Defects and Dopants in 2D Layered Transition Metal Dichalcogenides.

Topological vacancies in spherical crystals.

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors

Topological vacancies in spherical crystal clusters

Ultralong 1D Vacancy Channels for Rapid Atomic Migration During 2D Void Formation in Monolayer MoS2.

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Vacancy Mediated Inelasticity in Two-Dimensional Vanadium-based Dichalcogenides

Defects, band bending and ionization rings in MoS2