Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Natural formation of linear defect structures in MoS2

Defects, band bending and ionization rings in MoS2

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Defect modulated electronic structure and magnetism in the 1T ' phase of Janus MoSSe

Line Defects in Molybdenum Disulfide Layers

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

Single-layer $1T'$-MoS$_2$ under electron irradiation from $ab$ $initio$ molecular dynamics

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Enhancing heat transport in MoS2 via defect-engineering

Observation of Gap Opening in 1T' Phase MoS2 Nanocrystals

Effect of point defects on the band alignment and transport properties of 1T-MoS2/2H-MoS2/1T-MoS2 heterojunctions