Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Structural and electronic properties of germanene on MoS$_2$

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS 2(1− x ) Se 2 x

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

First-Principles Density Functional Theory Study of Modified Germanene-Based Electrode Materials

Electronic Properties of Defective Janus MoSSe Monolayer

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

Electronic properties of MoSe$_2$ nanowrinkles

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Visualization of defect induced in-gap states in monolayer MoS2

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Substitutional doping at S site of MoS2/G heterostructure: The influence on voltage-current and electronic characteristics