Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Defect modulated electronic structure and magnetism in the 1T ' phase of Janus MoSSe

Magnetism in Molybdenum Disulphide Monolayer with Sulfur Substituted by 3d Transition Metals

Electronic Properties of Defective Janus MoSSe Monolayer

Controlling Magnetism of Monolayer Janus MoSSe by Embedding Transition-Metal Atoms

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS 2(1− x ) Se 2 x

The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Effect of Interfacial Defects on the Electronic Properties of MoS$_2$ Based Lateral T-H Heterophase Junctions

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Effect of point defects on the band alignment and transport properties of 1T-MoS2/2H-MoS2/1T-MoS2 heterojunctions

Non-stoichiometry induced 2H-1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Electronic and Optical Properties of Pristine and Vertical and Lateral Heterostructures of Janus MoSSe and WSSe

Vibrational and Magnetic States of Point Defects in Bilayer MoSe 2

Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

Defects, band bending and ionization rings in MoS2

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.