Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Single-layer $1T'$-MoS$_2$ under electron irradiation from $ab$ $initio$ molecular dynamics

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Electron-irradiation effects on monolayer MoS2 at elevated temperatures

A Molecular Dynamics Study on the Defect Formation and Mechanical Behavior of Molybdenum Disulfide under Irradiation

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Effect of gamma irradiation on the physical properties of MoS2 monolayer

Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate

Defect Sizing, Separation, and Substrate Effects in Ion-Irradiated Monolayer Two-Dimensional Materials

Edge‐Mediated Annihilation of Vacancy Clusters in Monolayer Molybdenum Diselenide (MoSe 2 ) under Electron Beam Irradiation

Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides

The pristine atomic structure of MoS2 monolayer protected from electron radiation damage by graphene

Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

Dynamic Structural Response and Deformations of Monolayer $MoS_{2}$ Visualized by Femtosecond Electron Diffraction

Control of Radiation Damage in MoS2 by Graphene Encapsulation

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Ultrafast Optical Response and Ablation Mechanisms of Molybdenum Disulfide under Intense Femtosecond Laser Irradiation