Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Line Defects in Molybdenum Disulfide Layers

Intrinsic structural defects in monolayer molybdenum disulfide

Natural formation of linear defect structures in MoS2

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Double-edged roles of intrinsic defects in two-dimensional MoS<sub>2</sub>

Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS2 Stack

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Mesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique.

Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Defect MoS Misidentified As MoS2 in Monolayer MoS2 by Scanning Transmission Electron Microscopy: A First-Principles Prediction.

Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2.

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Exploring atomic defects in molybdenum disulphide monolayers

Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects

Effect of line defects on the electrical transport properties of monolayer MoS$_{2}$ sheet

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices