Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy

Vibrational and Magnetic States of Point Defects in Bilayer MoSe2

Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2-MoSe2 lateral heterojunctions

Vibrational and Magnetic States of Point Defects in Bilayer MoSe 2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Line Defects in Molybdenum Disulfide Layers

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Exploring atomic defects in molybdenum disulphide monolayers

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Electronic Properties of Defective Janus MoSSe Monolayer

Native Point Defects of Semiconducting Layered Bi2O2Se

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Molecular-beam epitaxy of monolayer MoSe<sub>2</sub>: growth characteristics and domain boundary formation

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Quantify point defects in monolayer tungsten diselenide

Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

Natural formation of linear defect structures in MoS2

Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects

Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe<sub>2</sub>

Effect of point defects on electronic structure and optical properties of monolayer MoS2