Effect of point defects on electronic structure and optical properties of monolayer MoS2

FAN Meng-Hui,XIE Quan,CAI Xun-Ming,CEN Wei-Fu,LUO Zui-Fen,GUO Xiao-Tian,YAN Wan-Jun

DOI: https://doi.org/10.3969/j.issn.1000-0364.2015.03.019

2015-01-01

Journal of Atomic and Molecular Physics

Abstract:The electronic structure, energy band structures, density of states and optical properties of monolayer MoS2 with point defects have been calculated by density functional theory ( DFT) of the first-principles pseudo potential method wave method.The calculated results show that monolayer MoS2 is a direct semiconductor with the band gap of 1.749eV, monolayer MoS2 with the point defect of Mo vacancy V-Mo is an indirect p type sem-iconductor with the band gap of 0.660eV, the band gap of monolayer MoS2 with the point defect of S vacancy V-S reduces to 0.985eV, monolayer MoS2 with the point defect of S-Mo that Mo is replaced by S is a direct semiconductor with the band gap of 0.374eV, monolayer MoS2 with the point defects of Mo-S that S is replaced by Mo is a direct semiconductor with the band gap of 0.118 eV.The density of states near the Fermi energy level is mainly composed of Mo-4d and S-3p states.The optical properties calculation indicates that among the four kinds of point defects, the vacancy defects are the most significant for the optical properties.The vacancy defects increase the dielectric function, the complex refractive index and the reflectivity, and decrease the absorption co-efficient and the loss function.