Abstract:Molybdenum disulfide (MoS2) is one of the candidate materials for nanoelectronics and optoelectronics devices in the future. The electronic and magnetic properties of MoS2 can be regulated by interlayer interaction and the vacancy effect. Nevertheless, the combined effect of these two factors on MoS2 is not clearly understood. In this study, we have investigated the impact of a single S vacancy combined with interlayer interaction on the properties of bilayer MoS2. Our calculated results show that an S vacancy brings impurity states in the band structure of bilayer MoS2, and the energy level of the impurity states can be affected by the interlayer distance, which finally disappears in the bulk state when the layer distance is relatively small. Moreover, during the compression of bilayer MoS2, the bottom layer, where the S vacancy stays, gets an additional charge due to interlayer charge transfer, which first increases, and then decreases due to gradually forming the interlayer S-S covalent bond, as interlayer distance decreases. The change of the additional charge is consistent with the change of the total magnetic moment of the bottom layers, no magnetic moment has been found in the top layer. The distribution of magnetic moment mainly concentrates on the three Mo atoms around the S vacancy, for each of which the magnetic moment is very much related to the Mo-Mo length. Our conclusion is that the interlayer charge transfer and S vacancy co-determine the magnetic properties of this system, which may be a useful way to regulate the electronic and magnetic properties of MoS2 for potential applications.

Effect of Vacancies on Structural, Electronic and Optical Properties of Monolayer Mos2: A First-Principles Study

Effect of vacancies in monolayer MoS2 on electronic properties of Mo–MoS2 contacts

First-principles investigations on vacancy formation and electronic structures of monolayer MoS 2

Structural and Electronic Properties in Monolayer MoS _2 with Various Vacancies: First-Principles Calculations

Effect of point defects on electronic structure and optical properties of monolayer MoS2

Bandgap Engineering Of Few-Layered Mos2 With Low Concentrations Of S Vacancies

Electronic and optical properties of S vacancy and Br and I doped monolayer MoS 2 : a first-principle study

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Tuning the electronic properties of Ti-MoS2 contacts through introducing vacancies in monolayer MoS2.

Role of Vacancies in Tuning the Electronic Properties of Au-MoS2 Contact

First-principles Study of Vacancy Defects at Interfaces Between Monolayer MoS2 and Au

Charge and Strain Induced Magnetism in Monolayer MoS2 with S Vacancy

Electronic and Optical Properties of Sulfur Vacancy-Defect Monolayer PtS2: A First-Principles Study

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2

Oxygen Atom Adsorbed on the Sulphur Vacancy of Monolayer MoS2: A Promising Method for the Passivation of the Vacancy Defect

Effects of Vacancy and External Electric Field on the Electronic Properties of the MoSi2N4/graphene Heterostructure

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Vacancy effect on the structure and diffusion of a Li adatom on the 2D Janus MoSSe monolayer

Defect Induced Gap States in Monolayer Mos2 Control the Schottky Barriers of Pt-Mmos(2) Interfaces