Abstract:Molybdenum disulfide (MoS2) is one of the candidate materials for nanoelectronics and optoelectronics devices in the future. The electronic and magnetic properties of MoS2 can be regulated by interlayer interaction and the vacancy effect. Nevertheless, the combined effect of these two factors on MoS2 is not clearly understood. In this study, we have investigated the impact of a single S vacancy combined with interlayer interaction on the properties of bilayer MoS2. Our calculated results show that an S vacancy brings impurity states in the band structure of bilayer MoS2, and the energy level of the impurity states can be affected by the interlayer distance, which finally disappears in the bulk state when the layer distance is relatively small. Moreover, during the compression of bilayer MoS2, the bottom layer, where the S vacancy stays, gets an additional charge due to interlayer charge transfer, which first increases, and then decreases due to gradually forming the interlayer S-S covalent bond, as interlayer distance decreases. The change of the additional charge is consistent with the change of the total magnetic moment of the bottom layers, no magnetic moment has been found in the top layer. The distribution of magnetic moment mainly concentrates on the three Mo atoms around the S vacancy, for each of which the magnetic moment is very much related to the Mo-Mo length. Our conclusion is that the interlayer charge transfer and S vacancy co-determine the magnetic properties of this system, which may be a useful way to regulate the electronic and magnetic properties of MoS2 for potential applications.

Charge and Strain Induced Magnetism in Monolayer MoS2 with S Vacancy

Strain-induced magnetism in MoS2 monolayer with defects

Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Magnetism in Molybdenum Disulphide Monolayer with Sulfur Substituted by 3d Transition Metals

Strain effects on the behavior of isolated and paired sulfur vacancy defects in monolayer MoS 2

Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Vacancy-Induced Ferromagnetism Of Mos2 Nanosheets

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Enhancing Magnetic Vacancies in Semiconductors by Strain

Electronic and Magnetic Properties of Graphene, Silicene and Germanene with Varying Vacancy Concentration

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Robust room-temperature ferromagnetism induced by defect engineering in monolayer MoS2

Defect modulated electronic structure and magnetism in the 1T ' phase of Janus MoSSe

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?

Synergetic Effect of Substitutional Dopants and Sulfur Vacancy in Modulating the Ferromagnetism of MoS 2 Nanosheets.

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Non-stoichiometry induced 2H-1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide