Abstract:Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, doping, and creating in-plane or out-of-plane heterostructures. Here, we report on the synthesis and characterization of atomically controlled two-dimensional graded alloy of MoxW1-xS2, wherein the center region is Mo rich and gradually transitions towards a higher concentration of W atoms at the edges. This unique alloy structure leads to a continuously tunable bandgap, ranging from 1.85 eV in the center to 1.95 eV at the edges consistent with the larger band gap of WS2 relative to MoS2. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1-xS2 layer as a function of Mo content with the highest value in the Mo rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which was split due to the spin-orbit interaction, with energy levels close to the conduction band or deep in the band gap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin-allowed optical transitions between the VS levels and the valence bands. Our work highlights the potential of simultaneous defect and optical engineering of novel devices based on these 2D monolayers.

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Local Structure of Sulfur Vacancies on the Basal Plane of Monolayer MoS2

Strain effects on the behavior of isolated and paired sulfur vacancy defects in monolayer MoS 2

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers

Chain Vacancies in 2D Crystals.

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Natural formation of linear defect structures in MoS2

Remarkably high thermal-driven MoS<sub>2</sub>grain boundary migration mobility and its implications on defect healing

Charge and Strain Induced Magnetism in Monolayer MoS2 with S Vacancy

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2

Electron transport through the multiple sulfur vacancies in MoS2

Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS 2 Monolayers

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Impact of Grain Boundaries on the Electronic Properties and Schottky Barrier Height of MoS 2 @Au Heterojunctions