Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution. However, how to control the defect type, density, and distribution in these materials is still a challenge. In this study, we explore the kinetics and dynamics of four types of grain boundaries (GBs) in monolayer MoS2, which are composed of S-polar dislocation (S5|7), Mo-polar dislocation (Mo5|7), dislocation-double S vacancy complex (S4|6), and dislocation-double S interstitial complex (S6|8), respectively. Our study shows that these four GBs in monolayer MoS(2)exhibit a great disparity in their migration behavior. More specifically, the S4|6 and S6|8 GBs possess a much higher migration mobility than the S5|7 and Mo5|7 GBs under the same thermal fluctuations or temperature gradient. Interestingly, the S4|6 and S6|8 GBs follow an abnormal relationship with temperature, due to the change in defect configurations with temperature. Our study further shows that the remarkably high mobilities of the S4|6 and Mo6|8 GBs may enable the reactions of GBs, leading to the annihilation and reduction of defect density. In addition, the movement of GBs in MoS(2)under a temperature gradient field can cause defect redistribution, which in turn changes the thermal conductivity. The present study not only deepens our understanding of the dynamic evolution of GBs in TMDs, but also presents new opportunities to engineer GBs for novel electronic applications.

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Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects

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An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions

Misorientation-angle-dependent Electrical Transport Across Molybdenum Disulfide Grain Boundaries

Remarkably high thermal-driven MoS<sub>2</sub>grain boundary migration mobility and its implications on defect healing

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Atomically Sharp Interlayer Stacking Shifts at Anti-Phase Grain Boundaries in Overlapping MoS2 Secondary Layers.

Strengthening and Weakening by Dislocations in Monolayer MoS 2

Strengthening and Weakening by Dislocations in Monolayer MoS2

Bandgap broadening at grain boundaries in single-layer MoS 2

Effect of Graphene Grain Boundaries on MoS2/graphene Heterostructures

Nature of point defects in monolayer MoS2 and the MoS2/(111)Au heterojunction

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Modulating the Schottky Barriers in MoS2/MXenes Heterostructures Via Surface Functionalization and Electric Field

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2