Misorientation-angle-dependent Electrical Transport Across Molybdenum Disulfide Grain Boundaries

Thuc Hue Ly,David J. Perello,Jiong Zhao,Qingming Deng,Hyun Kim,Gang Hee Han,Sang Hoon Chae,Hye Yun Jeong,Young Hee Lee

DOI: https://doi.org/10.1038/ncomms10426

IF: 16.6

2016-01-01

Nature Communications

Abstract:Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures and band dispersion relations that depend on the inter-domain misorientation angle. Here, we explore misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations. Transmission electron microscopy indicates that grain boundaries are primarily composed of 5-7 dislocation cores with periodicity and additional complex defects formed at high angles, obeying the classical low-angle theory for angles <22°. The inter-domain mobility is minimized for angles <9° and increases nonlinearly by two orders of magnitude before saturating at ∼ 16 cm(2) V(-1) s(-1) around misorientation angle ≈ 20°. This trend is explained via grain-boundary electrostatic barriers estimated from density functional calculations and experimental tunnelling barrier heights, which are ≈ 0.5 eV at low angles and ≈ 0.15 eV at high angles (≥ 20°).