Abstract:Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, doping, and creating in-plane or out-of-plane heterostructures. Here, we report on the synthesis and characterization of atomically controlled two-dimensional graded alloy of MoxW1-xS2, wherein the center region is Mo rich and gradually transitions towards a higher concentration of W atoms at the edges. This unique alloy structure leads to a continuously tunable bandgap, ranging from 1.85 eV in the center to 1.95 eV at the edges consistent with the larger band gap of WS2 relative to MoS2. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1-xS2 layer as a function of Mo content with the highest value in the Mo rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which was split due to the spin-orbit interaction, with energy levels close to the conduction band or deep in the band gap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin-allowed optical transitions between the VS levels and the valence bands. Our work highlights the potential of simultaneous defect and optical engineering of novel devices based on these 2D monolayers.

Electronic and Optical Properties of Sulfur Vacancy-Defect Monolayer PtS2: A First-Principles Study

Vacancy Formation and Oxidation Characteristics of Single Layer TiS3

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Local Structure of Sulfur Vacancies on the Basal Plane of Monolayer MoS2

Chemical and Electronic Repair Mechanism of Sulfur Defects in MoS$_2$ Monolayers

Strain effects on the behavior of isolated and paired sulfur vacancy defects in monolayer MoS 2

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2

Complicated point defects in monolayer Ga2S3: stability, midgap states and magnetism

Defects, band bending and ionization rings in MoS2

Investigating atomic structures and electronic properties of WS 2 thin films with sulfur vacancies via neural network potential-aided first-principles study

First-principles Study of the Adsorption of Sulfur on Pt(111): S Core-Level Shifts and the Nature of the Pt-S Bond

Electronic and optical properties of S vacancy and Br and I doped monolayer MoS 2 : a first-principle study

Atomic Observation of Filling Vacancies in Monolayer Transition Metal Sulfides by Chemically Sourced Sulfur Atoms

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS$_{2}$

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2