Abstract:omic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing oxidized Molybdenum (Mo) foil using CVD and delve into the transport properties of as-grown samples. Devices fabricated from these MoS2 sheets exhibit excellent electrical responses, with the standout device achieving mobility exceeding 100 cm2V-1s-1. Structural analysis and optical signatures unveiled the presence of chalcogen defects within these samples. To decipher the influence of inherent defects on the electronic transport properties, we measured low-temperature transport on two distinct sets of devices exhibiting relatively high or low mobilities. Combining the thermally activated transport model with quantum capacitance calculations, we have shown the existence of shallow states near the conduction band, likely attributed to sulfur vacancies within MoS2. These vacancies are responsible for the hopping conduction of electrons in the device channel. Furthermore, our claims were substantiated through low-temperature scanning tunnelling microscopy measurements, which revealed an abundance of isolated and lateral double sulfur vacancies in Mo foil-grown samples. We found that these vacancies increase the density of states near the conduction band, inducing intrinsic n-type doping in the MoS2 channel. Consequently, this elevated conductivity enhances the field-effect mobility of MoS2 transistors. Our study offers insights into chalcogen vacancies in CVD-grown monolayer MoS2 and highlights their beneficial impact on electronic transport properties.

First-principles Study of Vacancy Defects at Interfaces Between Monolayer MoS2 and Au

Role of Vacancies in Tuning the Electronic Properties of Au-MoS2 Contact

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Making Patterned Single Defects in MoS 2 Thermally with the MoS 2 /Au Moiré Interface

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Electrical Properties of MoS2-Au Contact Based on the First Principle Study

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Nature of point defects in monolayer MoS2 and the MoS2/(111)Au heterojunction

Delamination of MoS2/SiO2 Interfaces under Nanoindentation.

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Beyond Perturbation: Role of Vacancy-Induced Localized Phonon States in Thermal Transport of Monolayer MoS2

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Fabricating model heterostructures of large-area monolayer or bilayer MoS 2 on an Au(111) surface under ultra-high vacuum

Fabricating Model Heterostructures of Large-Area Monolayer or Bilayer MoS2 on an Au(111) Surface under Ultra-High Vacuum

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil