Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Making Patterned Single Defects in MoS 2 Thermally with the MoS 2 /Au Moiré Interface

Making Patterned Single Defects in MoS2 Thermally with the MoS2/Au Moiré Interface

Large Lattice Mismatch of Nanocomposite Coating: In-situ Establishment of MoS2 by Precursor and Desulfurization Reaction

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Visualization of defect induced in-gap states in monolayer MoS2

Defect Engineering of Two-dimensional Molybdenum Disulfide

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Exploring atomic defects in molybdenum disulphide monolayers

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Enhancing heat transport in MoS2 via defect-engineering

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Engineering of Oxidized Line Defects on CVD-Grown MoS2 Flakes

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Role of Vacancies in Tuning the Electronic Properties of Au-MoS2 Contact

Low-Defect-Density Monolayer MoS2 Wafer by Oxygen-Assisted Growth-Repair Strategy