Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and Gamma points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at similar to 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurring in bulk semiconductors, is associated with a combination of several critical points. Additionally, extending into the vacuum ultraviolet energy spectrum are a series of newly observed oscillations representing optical transitions from valence bands to higher conduction bands of the monolayer MoS2 complex band structure. These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.

First-Principles Calculation of Electronic Structure and Optical Properties of Monolayer MoS1.89X0.11

First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Electronic and optical properties of single-layer MoS 2

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

Electronic and optical properties of S vacancy and Br and I doped monolayer MoS 2 : a first-principle study

Structure and Electronic Properties of MoSi2P4 Monolayer

Electronic Properties and Quasi-Particle Model of Monolayer MoSi_2N_4

First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions

First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

First Principles Study of the Photoelectric Properties of Alkaline Earth Metal (Be/Mg/Ca/Sr/Ba)-Doped Monolayers of MoS2

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Broadband Optical Properties Of Large-Area Monolayer Cvd Molybdenum Disulfide

The First Principles Calculation on the Raman Spectrum and Optical Properties of the Defect Monolayer MoS2

First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2

Progress in First-Principles Studies of MoS2

Theoretical design of novel two-dimensional Mo2S2X2 (X=C,Si) and their electronic and mechanical properties

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

First Principles Study on Molecule Doping in MoS2 Monolayer

Electronic and Transport Properties of 2H 1−x 1T X MoS 2 Hybrid Structure: A First-Principle Study

First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer