Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Hidden Vacancy Benefit in Monolayer 2D Semiconductors

Repairing Atomic Vacancies in Single-Layer MoSe2 Field-Effect Transistor and Its Defect Dynamics

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Effect of vacancies in monolayer MoS2 on electronic properties of Mo–MoS2 contacts

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Long-Term Evolution of Vacancies in Large-Area Graphene

First-principles Study of Vacancy Defects at Interfaces Between Monolayer MoS2 and Au

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Harnessing Defects for High-Performance MoS2 Tunneling Field-Effect Transistors

Chain Vacancies in 2D Crystals.

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices