Abstract:A novel 2D semiconductor, MoSi2N4 monolayer, was very recently successfully fabricated and shown great potential for future broad applications in nanoelectronic devices and catalysis. For the synthesis and application of the material, intrinsic point defects are required to be considered, because they are inevitably formed during the bottom-up synthesis and following substrate transfer process, and also can be intentionally introduced by defect engineering to modulate properties and explore applications of materials. Herein, eight types of intrinsic point defects including two vacancies (N mono- and di-vacancies; VN(m) and VN2(m)), four antisites (SiMo, SiN(t), MoN(m) and MoSi) and two adatoms (Siada and Nada) are found to have highly thermodynamic stabilities in MoSi2N4 monolayer under various chemical environments. Electronic properties calculations suggest the existence of VN(m) and VN2(m) leads to the emergence of the recombination center, reducing the carrier lifetime and thus showing the potential for high-speed switching device applications. SiN(t) and Siada-defected structures show p-type and n-type conducting characters, respectively, which can be explored for possible PN junction applications. Also, the existence of MoSi may induce unusual resistance–temperature dependence behavior, providing some chances to design high-mobility semiconductors. Combined with the migration behavior of point defects (monovacancies and adatoms), the Schottky defect formation mechanism of VN(m) could be reasonably explained. Besides, high migration barriers of monovacancy defects (VN(m), VSi and VMo) demonstrate their higher kinetic stability in monolayer, compared with monovacancies in graphene and silicene. The migration of N adatom is relatively difficult than that of Si adatom, increasing opportunities to detect it in experiments. This work will provide insight into defect engineering of MoSi2N4 monolayer and the MA2Z4 monolayer family for various applications.

Repairing Atomic Vacancies in Single-Layer MoSe2 Field-Effect Transistor and Its Defect Dynamics

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Atomic‐Precision Repair of a Few‐Layer 2h‐mote2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

Identification and Manipulation of Atomic Defects in Monolayer SnSe

Exploring atomic defects in molybdenum disulphide monolayers

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Colossal structural distortion and interlayer-coupling suppression in a van der Waals crystal induced by atomic vacancies

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Mass transport induced structural evolution and healing of sulfur vacancy lines and Mo chain in monolayer MoS2

A Facile and Effective Method for Patching Sulfur Vacancies of WS2 Via Nitrogen Plasma Treatment