Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

Metastable Interlayer Frenkel Pair Defects by Dipole-like Strain Fields for Dimensional Distortion in Black Phosphorus

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Strain-Tunable Van Der Waals Interactions In Few-Layer Black Phosphorus

Charged Defects in Two-Dimensional Semiconductors of Arbitrary Thickness and Geometry: Formulation and Application to Few-Layer Black Phosphorus

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Layer-Dependent Electronic and Optical Properties of 2D Black Phosphorus: Fundamentals and Engineering

Electron-beam-induced adatom-vacancy-complexes in mono- and bilayer phosphorene

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Defects and Strain Engineering of Structural, Elastic, and Electronic Properties of Boron-Phosphide Monolayer: A Hybrid Density Functional Theory Study

Evolution of Intrinsic Vacancies and Prolonged Lifetime of Vacancy Clusters in Black Phosphorene

Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects

Remarkably low-energy one-dimensional fault line defects in single-layered phosphorene

Evolution of Intrinsic Vacancies and Prolonged Lifetimes of Vacancy Clusters in Black Phosphorene.

Surface Buckling of Black Phosphorus: Determination, Origin, and Influence on Electronic Structure

The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus

Isolation and characterization of few-layer black phosphorus

A Stillinger-Weber Potential for Single-Layer Black Phosphorus, and the Importance of Cross-Pucker Interactions for Negative Poisson's Ratio and Edge Stress-Induced Bending

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus