Abstract:Abstract The epitaxial growth of wafer-scale single-crystalline two-dimensional materials requires precise control over the crystallographic orientation and morphology of clusters formed during the initial stages of nucleation. However, there is limited knowledge about the critical nucleus and its growth mechanism for h-BN on high-symmetry surfaces of transition metals. In this study, we provide atomic insights into h-BN nucleation on Ir(111) using scanning tunneling microscopy (STM) and noncontact atomic force microscopy (nc-AFM), corraborated by density functional theory (DFT) calculations. The atomic-resolved structural characterization reveals that the smallest h-BN cluster, exhibiting a non-1:1 stoichiometric ratio of boron and nitrogen atoms, maintains a triangular shape with zigzag-type edges. Through AFM force spectroscopy, individual B and N atoms within the cluster, as well as the N-termination edge, are clearly identified. The achievement of elemental sensitivity at the atomic scale is attributed to the chemical reactivity of the metallic tip. The local registry of h-BN nuclei that align with the prevailing crystalline orientation is consistently identified as NtopBhcp. Despite DFT calculations indicating the energetically favorable NtopBfcc configuration for larger h-BN clusters, the alignment of the nuclei with respect to the underlying substrate remains unchanged throughout the growth of the clusters. This orientation pinning behavior, which impeding the rotational alignment of nuclei following the formation of initial clusters during the early stages of nucleation, presents a valuable avenue for exploring the large-scale growth of binary and ternary materials.

Effects of Monolayer Bi on the Self-Assembly of DBBA on Au(111)

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Chiral Self-Assembly of Nonplanar 10,10'-Dibromo-9,9'-bianthryl Molecules on Ag(111).

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Bottom-Up Fabrication Of Graphene Nanostructures On Ru (10(1)Over-Bar0)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

STRUCTURAL AND ELECTRONIC PROPERTIES OF Bi/Au(110)

The Adsorption Geometry and Molecular Self-Assembly of Graphene for 1,3,5-Triphenylbenzene on Cu(111)

Formation of a monolayer h -BN nanomesh on Rh (111) studied using in-situ STM

Fullerene-derivative PC 61 BM Forms Three Types of Phase-Pure Monolayer on the Surface of Au(111)

Atomic bonding and binding energy of two-dimensional Bi/Li(110) heterojunctions via BOLS and BB model

Bi- and Au-Induced Reconstructions on GaAs(001)-2 ×4 Surface

Substrate-induced structures of bismuth adsorption on graphene: a first principle study

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

Influence of Relativistic Effects on Assembled Structures of V-Shaped Bispyridine Molecules on M(111) Surfaces Where M = Cu, Ag, Au.

From Self‐Assembly Hierarchical h‐BN Patterns to Centimeter‐Scale Uniform Monolayer h‐BN Film

Strong Adlayer-Substrate Interactions "break" the Patching Growth of H-Bn Onto Graphene on Re(0001).

Mechanisms of nucleation and post-nucleation of bismuth tri-iodide onto graphene substrates