Abstract:The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Substrate-induced structures of bismuth adsorption on graphene: a first principle study

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Effects of Monolayer Bi on the Self-Assembly of DBBA on Au(111)

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Bi-intercalated epitaxial graphene on SiC(0001)

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP(0 0 1))- ζ (4 × 2) reconstructed surfaces

First-principles analysis of intercalated Pb structures under buffer-layer graphene on SiC(0001): Pb(111)-, plumbene-, and amorphous-like Pb layers

Band gap engineering by Bi intercalation of graphene on Ir(111)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates

Mechanisms of nucleation and post-nucleation of bismuth tri-iodide onto graphene substrates

Mn Atomic Layers under Inert Covers of Graphene and Hexagonal Boron Nitride Prepared on Rh(111)

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Atomic mechanism of the phase transition in monolayer bismuthene on copper oxide

Ab Initio Optical Study of Graphene on Hexagonal Boron Nitride and Fluorographene Substrates

Strong Adlayer-Substrate Interactions "break" the Patching Growth of H-Bn Onto Graphene on Re(0001).

Effects of a Graphene Substrate on the Structure and Properties of Atomically Thin Metal Sheets.

First Principle Study: Electronic Properties of Graphene on Boron Phosphide