Abstract:Boron nanostructures on the Cu(111) substrate undergo an evolution from amorphous boron to the striped‐phase borophene and then to β‐type borophene on the substrate surface or embedded in the topmost Cu layer with the gradual elevation of annealing temperature. The ⟨11 ̄0⟩ edges of Cu(111) trigger the formation of the striped‐phase borophene, acting as the transition phase for β‐type borophene. Borophene, a promising material with potential applications in electronics, energy storage, and sensors, is successfully grown as a monolayer on Ag(111), Cu(111), and Au(111) surfaces using molecular beam epitaxy. The growth of two‐dimensional borophene on Ag(111) and Au(111) is proposed to occur via surface adsorption and boron segregation, respectively. However, the growth mode of borophene on Cu(111) remains unclear. To elucidate this, scanning tunneling microscopy in conjunction with theoretical calculations is used to study the phase transformation of boron nanostructures under post‐annealing treatments. Results show that by elevating the substrate temperature, boron nanostructures undergo an evolution from amorphous boron to striped‐phase borophene (η = 1/6) adhering to the Cu ⟨11 ̄0⟩ step edge, and finally to irregularly shaped β‐type borophene (η = 5/36) either on the substrate surface or embedded in the topmost Cu layer. dI/dV spectra recorded near the borophene/Cu lateral interfaces indicate that the striped‐phase borophene is a metastable phase, requiring more buckling and electron transfer to stabilize the crystal structure. These findings offer not only an in‐depth comprehension of the β‐type borophene formation on Cu(111), but also hold potential for enabling borophene synthesis on weakly‐binding semiconducting or insulating substrates with 1D active defects.

Atomic mechanism of the phase transition in monolayer bismuthene on copper oxide

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Monolayer Borophene Formation on Cu(111) Surface Triggered by ⟨11 ̄0⟩ Step Edge

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Realizing a Superconducting Square-Lattice Bismuth Monolayer

Depositing boron on Cu(111): Borophene or boride?

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Synthesis of bilayer borophene

Tuning the Topological Band Gap of Bismuthene with Silicon-based Substrate

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Photo-induced electronic and spin topological phase transitions in monolayer bismuth

Large-area single-crystal sheets of borophene on Cu(111) surfaces

Phase transition in epitaxial bismuth nanofilms

Ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride

Modification of electronic, magnetic structure and topological phase of bismuthene by point defects

Sandwiched Epitaxy Growth of 2D Single-Crystalline Hexagonal Bismuthene Nanoflakes for Electrocatalytic CO2 Reduction.

Experimental evidence of surface copper boride

Sandwiched Epitaxy Growth of 2D Single-Crystalline Hexagonal Bismuthene Nanoflakes for Electrocatalytic CO 2 Reduction