Abstract:The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices<a href="/articles/s41586-019-1226-z#ref-CR1">1</a>. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41586-019-1226-z#ref-CR4">4</a>. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="/articles/s41586-019-1226-z#ref-CR12">12</a>. However, the size of 2D hBN single crystals is typically limited to less than one millimetre<a href="#ref-CR13">13</a>,<a href="#ref-CR14">14</a>,<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="#ref-CR17">17</a>,<a href="/articles/s41586-019-1226-z#ref-CR18">18</a>, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates<a href="/articles/s41586-019-1226-z#ref-CR19">19</a>. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides<a href="#ref-CR20">20</a>,<a href="#ref-CR21">21</a>,<a href="#ref-CR22">22</a>,<a href="/articles/s41586-019-1226-z#ref-CR23">23</a>, to produce large single crystals.

Sandwiched Epitaxy Growth of 2D Single-Crystalline Hexagonal Bismuthene Nanoflakes for Electrocatalytic CO 2 Reduction

Sandwiched Epitaxy Growth of 2D Single-Crystalline Hexagonal Bismuthene Nanoflakes for Electrocatalytic CO2 Reduction.

Sandwiched Epitaxy Growth of Single-Crystalline Hexagonal Bismuthene Nanoflakes for Highly Selective Electrocatalytic CO2-to-formate Conversion

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Single-Crystalline Dendritic Bimetallic And Multimetallic Nanocubes

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Large‐Area Vertically Aligned Bismuthene Nanosheet Arrays from Galvanic Replacement Reaction for Efficient Electrochemical CO 2 Conversion

Interlayer-Confined Alloying Dissolution–Precipitation Growth and Electronic Transport Modulation of Large-Area Coastline-like Fractal Bismuthene Films with Statistic Self-Similarity

Highly Tensile Strained Cu(100) Surfaces by Epitaxial Grown Hexagonal Boron Nitride for CO 2 Electroreduction to C 2+ Products

Liquid-phase Exfoliated Ultrathin Bi Nanosheets: Uncovering the Origins of Enhanced Electrocatalytic CO2 Reduction on Two-Dimensional Metal Nanostructure

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Controllable Crystallization of Two‐Dimensional Bi Nanocrystals with Morphology‐Boosted CO2 Electroreduction in Wide pH Environments

Highly Tensile Strained Cu(100) Surfaces by Epitaxial Grown Hexagonal Boron Nitride for CO2 Electroreduction to C2+ Products

Towards the growth of single-crystal boron nitride monolayer on Cu

Structural Directed Growth of Ultrathin Parallel Birnessite on Β-Mno2 for High-Performance Asymmetric Supercapacitors.

Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

Revealing the Intrinsic Restructuring of Bi 2 O 3 Nanoparticles into Bi Nanosheets during Electrochemical CO 2 Reduction

Van der Waals Epitaxial Growth of Two-Dimensional BiOBr Flakes with Dendritic Structures for the Hydrogen Evolution Reaction

Mechanism of Controllable Growth of Large-Area Single-Crystal Hexagonal Boron Nitride on Preoxidized Copper Substrate

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Two-Dimensional Fullerene Nanosheets Anchored with Ultrafine Bismuth Nanoparticles for Highly Selective Electrocatalytic Co2 Reduction to Hcooh over a Wide Potential Window