Abstract:Boron nanostructures on the Cu(111) substrate undergo an evolution from amorphous boron to the striped‐phase borophene and then to β‐type borophene on the substrate surface or embedded in the topmost Cu layer with the gradual elevation of annealing temperature. The ⟨11 ̄0⟩ edges of Cu(111) trigger the formation of the striped‐phase borophene, acting as the transition phase for β‐type borophene. Borophene, a promising material with potential applications in electronics, energy storage, and sensors, is successfully grown as a monolayer on Ag(111), Cu(111), and Au(111) surfaces using molecular beam epitaxy. The growth of two‐dimensional borophene on Ag(111) and Au(111) is proposed to occur via surface adsorption and boron segregation, respectively. However, the growth mode of borophene on Cu(111) remains unclear. To elucidate this, scanning tunneling microscopy in conjunction with theoretical calculations is used to study the phase transformation of boron nanostructures under post‐annealing treatments. Results show that by elevating the substrate temperature, boron nanostructures undergo an evolution from amorphous boron to striped‐phase borophene (η = 1/6) adhering to the Cu ⟨11 ̄0⟩ step edge, and finally to irregularly shaped β‐type borophene (η = 5/36) either on the substrate surface or embedded in the topmost Cu layer. dI/dV spectra recorded near the borophene/Cu lateral interfaces indicate that the striped‐phase borophene is a metastable phase, requiring more buckling and electron transfer to stabilize the crystal structure. These findings offer not only an in‐depth comprehension of the β‐type borophene formation on Cu(111), but also hold potential for enabling borophene synthesis on weakly‐binding semiconducting or insulating substrates with 1D active defects.

Depositing boron on Cu(111): Borophene or boride?

Experimental evidence of surface copper boride

Formation of copper boride on Cu(111)

Monolayer Borophene Formation on Cu(111) Surface Triggered by ⟨11 ̄0⟩ Step Edge

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

Large-area single-crystal sheets of borophene on Cu(111) surfaces

Synthesis of bilayer borophene

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

On the structures and bonding of copper boride nanoclusters, Cu2B– (x = 5–7)

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Quasi-Periodic Growth of One-Dimensional Copper Boride on Cu(110)

Atomic mechanism of the phase transition in monolayer bismuthene on copper oxide

Hard Copper Boride with Exceptional Conductivity

Synthesis of metalloborophene nanoribbons on Cu(110)

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Mechanism of Controllable Growth of Large-Area Single-Crystal Hexagonal Boron Nitride on Preoxidized Copper Substrate

Structure Investigation of the Fe on Cu(110) Surface

Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface

Boron in copper: a perfect misfit in the bulk and cohesion enhancer at a grain boundary