Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

Tuning the Topological Band Gap of Bismuthene with Silicon-based Substrate

Stability of topological properties of bismuth (111) bilayer

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Controllable Topological Insulator Phases in Litharge-phase InBi Monolayer

Topologically nontrivial phase and tunable Rashba effect in half-oxidized bismuthene

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Stacking-layer-tuned Topological Phases in M2Bi2Te5 (M = Ge, Sn, Pb) Films

Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties

Atomic mechanism of the phase transition in monolayer bismuthene on copper oxide

Higher-Order Topology in Bismuth

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse