Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Ambipolar field effect in Sb-doped Bi2Se3 nanoplates by solvothermal synthesis.

Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Electrical and Photoresponse Properties of Inversion Asymmetric Topological Insulator BiTeCl Nanoplates

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Topological Thermoelectric Materials Based on Bismuth Telluride

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

An Experimental Algorithm for Identifying the Topological Nature of Kondo and Mixed Valence Insulators