Abstract:Alloys of Bi2Te3 and Sb2Te3 [(Bi1-xSbx)(2)Te-3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb: Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb)(2)Te-3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x similar to 0.7, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x similar to 0.7 sample shows great similarity to pristine Bi2Te3. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (Bi1-xSbx)(2)Te-3.

Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

The Origin of Electronic Band Structure Anomaly in Topological Crystalline Insulator Group-Iv Tellurides

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 Via Surface Modification

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi 2 Te 4 via Surface Modification

Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Topological Crystalline Insulators in the SnTe Material Class

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Structural Stability And Topological Surface States Of The Snte (111) Surface

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Structural Phase Transition and Carrier Density Tuning in SnSexTe1-x Nanoplates for Topological Crystalline Insulators

Interplay of anomalous Hall angle and magnetic anisotropy in ferromagnetic topological crystalline insulators

Robustness of Topological Surface States Against Strong Disorder Observed in Bi2te3 Nanotubes

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators (Ge$_{1-δ-x}$Mn$_x$)$_2$Bi$_2$Te$_5$ ($x\leq 0.47$, $0.11 \leq δ\leq 0.20$)

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi2Te4)(Bi2Te3)n Magnetic Topological Insulators

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces